2006 IEEE International Reliability Physics Symposium Proceedings 2006
DOI: 10.1109/relphy.2006.251271
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Time-to-Fail Extraction Model for the "Mixed-Mode" Reliability of High-Performance SiGe Bipolar Transistors

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Cited by 5 publications
(4 citation statements)
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“…For short stress times (within a few hours), exponent α is around 0.5 for low/medium currents (consistent with [Che09]); on the other hand, it is found that the degradation rate decreases for longer stress times, where α approaches about 0.2. This is important in terms of device lifetime prediction (e.g., [Pan06]): if data are extrapolated from short-time experiments, the effect of degradation within a, e.g., 10-year timeframe would be largely overestimated. It must be remarked that the measured damage evolution does not indicate a trend to saturation within a 1,000-h-long stress time.…”
Section: Long-term MM Stress Characterization On Ihp Devicesmentioning
confidence: 99%
“…For short stress times (within a few hours), exponent α is around 0.5 for low/medium currents (consistent with [Che09]); on the other hand, it is found that the degradation rate decreases for longer stress times, where α approaches about 0.2. This is important in terms of device lifetime prediction (e.g., [Pan06]): if data are extrapolated from short-time experiments, the effect of degradation within a, e.g., 10-year timeframe would be largely overestimated. It must be remarked that the measured damage evolution does not indicate a trend to saturation within a 1,000-h-long stress time.…”
Section: Long-term MM Stress Characterization On Ihp Devicesmentioning
confidence: 99%
“…There is generally not a joint probability density function to describe these correlated failure modes; thus, it is a difficult and hot issue to compute the reliability with dependent failure modes in reliability study [1][2][3]. In [4][5][6][7], each failure mode is assumed to be independent when calculating the reliability with many failure modes; then, the series model of system reliability theory is introduced. This method is thought to be less rigorous in theory because the relevance of ultimate state functions among different failure modes is ignored, and the calculation error caused by it is hard to estimate.…”
Section: Introductionmentioning
confidence: 99%
“…Under such biasing conditions, these devices may encounter mixed mode (MM) degradation [1][2][3][4].…”
Section: Introductionmentioning
confidence: 99%
“…In order to determine lifetime in real product application, one can extrapolate the measured device degradation towards use conditions by making use of the lifetime model presented in [3]. This model incorporates the lifetime dependency on V CB , I E , as well as geometry.…”
Section: Introductionmentioning
confidence: 99%