Time-to-Failure Models for Selected Failure Mechanisms in Integrated Circuits

McPherson, J. W.

doi:10.1007/978-3-319-00122-7_11

Reliability Physics and Engineering 2013

DOI: 10.1007/978-3-319-00122-7_11

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Time-to-Failure Models for Selected Failure Mechanisms in Integrated Circuits

J. W. McPherson¹

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2018

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Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

Kuyama

Eriguchi

2018

Jpn. J. Appl. Phys.

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We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman's effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer -an oxidized layer -extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current-voltage (I-V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

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Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

Kuyama

Eriguchi

2018

Jpn. J. Appl. Phys.

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show abstract

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Time-to-Failure Models for Selected Failure Mechanisms in Integrated Circuits

Cited by 1 publication

References 72 publications

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

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