Time-varying Volterra-series analysis of spectral regrowth and noise power ratio in FET mixers

Garcia, Jose; Fuente, Luisa de la; Pedro, José; Carvalho, Nuno Borges; Newport, Y.; Mediavilla, A.; Tazón, A.

doi:10.1109/22.910560

Cited by 10 publications

(2 citation statements)

References 9 publications

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“…The analysis is inspired by the time-varying Volterra-series analysis [31][32][33][34][35]. This analysis models the effect of the LO signal, which is the source of strongly nonlinear mechanisms, as a time-modulation of the device's intrinsic elements.…”

Section: Optimum-bias Methods For Dp Mixersmentioning

confidence: 99%

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications

Pagnini

Collodi

Cidronali

2023

Sensors

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This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN) HEMT technology. Specifically, it describes a method aimed to predict the optimum bias conditions for active DP-mixers, leading to high conversion gain (CG) and linearity, along with the efficient use of the local oscillator drive level. A mixer prototype was designed and fabricated according to the discussed design principles; it exhibited a CG and an input third-order intercept point (IIP3) of +10dB and +11dBm, respectively, with a local oscillator power level of 20 dBm at about 3.7 GHz. In terms of gain and linearity, both figures exceed the documented limitations for the class of mixers considered in this work. To the authors’ best knowledge, this is the first DP mixer operating in the S-band. The prototype was also tested in a radar-like setup operating in the S-band frequency-modulated continuous-wave (FMCW) mode. Measurements carried out in the radar setup resulted in +39.7dB and +34.7dB of IF signal-to-noise-ratio (SNR) for the DP and the resistive mixers, respectively. For comparison purposes, a resistive mixer was designed and fabricated using the same GaN HEMT technology; a detailed comparison between the two topologies is discussed in the paper, thus further highlighting the capability of the DP-mixer for system applications.

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Section: Optimum-bias Methods For Dp Mixersmentioning

confidence: 99%

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications

Pagnini

Collodi

Cidronali

2023

Sensors

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“…A widespread method to analyze intermodulation distortion in microwave mixers is an extension of the large-signal/small-signal theory, combining any method to obtain the LO signal without limitations with a time-varying Volterra series for the RF signal [1]. This technique has been used repeatedly in FET microwave mixers by several authors [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Double Volterra series approach to FET mixers

Crespo‐Cadenas

Reina‐Tosina

2003

Micro & Optical Tech Letters

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calculation of parasitic shunt capacitance between the plate and ground plane gives 0.5 pF for the perforation ratio of 56%, that is, around 20% of the main capacitance. The capacitor with a conventional blanket ground has an SRF of 6.83 GHz, f QϾ30 of 6.1 GHz, and C eff of about 3 pF at 3 GHz. Also, the Q factor was around 85 in the 3-GHz range, while the parasitic shunt capacitance was 0.97 pF. The 56% perforation results in a 40% reduction of shunt capacitance, which improves the SRF by 0.8 GHz, f QϾ30 by 1.1 GHz, and Q factor by 224% without change of effective capacitance. Even though there was a slight further improvement of isolation with 44% perforation, the RF performance listed above was seriously degraded, as compared to the 56% case. From the analysis we can conclude that the capacitor cell shielded with 56% perforation ground (600-m square edge and 200-m conductor width) reveals the optimized isolation and RF performance for 3D RF circuit integration. CONCLUSIONThis work reports the design of an isolated capacitor cell of high values of Q factor and SRF for LTCC 3D RF circuit application. The optimized capacitor cell with perforated ground of 600-m square edge and 800-m pitch revealed good isolation of Ϫ20 dB transmission up to 15 GHz from a vertical interferer (located 114-m above) and a lateral interferer (located 300-m away). The fabricated 2.8-pF capacitor revealed an SRF of 7.6 GHz and Q factor of over 190 up to 3 GHz, which is an improvement of SRF by 0.8 GHz and Q factor by 224%, as compared to the conventionally grounded capacitor. ACKNOWLEDGMENTS This work was financially supported in part by the Ministry of Science and Technology of Korea and the Korea Institute of Science and Technology Evaluation and Planning (KISTEP).

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