Tin Doping Induced High‐Performance Solution‐Processed Ga₂O₃ Photosensor toward Neuromorphic Visual System

Abstract

Ga2O3 is an emerging wide‐bandgap semiconductor with high deep ultraviolet absorption, tunable persistent photoconductivity, and excellent stability toward electric fields, making it a promising component for neuromorphic visual systems (NVSs). However, Ga2O3‐based photosensors with high responsivity and long response decay times are required for efficient NVSs. A solution‐processed doping strategy for fabrication of Ga2O3 is proposed with tin foil as a dopant source. Tin‐doped Ga2O3 (Ga2O3:Sn) photosensors are obtained with ultrahigh responsivity and extremely long response decay times. These behaviors are attributed to substitutional tin and oxygen vacancies that modulate defect‐related hole trapping. High‐performance Ga2O3:Sn photosensors can mimic photonic synaptic behaviors and image pre‐processing functions. NVSs based on a Ga2O3:Sn photonic synapse array perform pattern recognition with an accuracy of 97.3% under an unprecedented low‐light pulse stimuli of 0.5 µW cm−2. This work provides a low‐cost solution‐processed approach to ultrasensitive Ga2O3:Sn NVSs and will facilitate developments in artificial intelligence technology.

Dual‐Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device

“…As a result, most optoelectronic devices can only fulfill the role of a single photodetector or an NVS. [35][36][37][38][39] To address this, researchers have proposed utilizing threeterminal devices or altering the direction of voltage to control the photoresponse speed. [40][41][42][43][44] However, three-terminal devices that use gate voltage to regulate the photoresponse speed not only require more complex preparation processes, device structures, and operating procedures but also have significantly higher power consumption due to the additional gate volt-age applied.…”

Effect of annealing temperature on the optoelectrical synapse behaviors of A-ZnO microtube

“…The obtained binding energy of O 1 s and Zn 2 p from the as-grown and annealed A-ZnO microtubes, are listed in Table S10, respectively. The Zn 2 p binding energy of annealed A-ZnO microtubes clearly shifted to higher energy, implying a decreased number of outer-shell electrons [ 42 ]. The capability of annealing temperature to regulate the defect concentration was further supported.…”

Active-Matrix Array Based on Thin-Film Transistors Using Emerging Materials for Application: From Lab to Industry

“…Unlike displays that process internal electrical signals to output visual information, sensors play a crucial role by receiving information about specific external elements and converting it into corresponding electrical signals. Sensors are categorized based on the detection target, ranging from particles like photons [72][73][74][75] and gases [76][77][78] to external physical changes such as pressure [37,79,80], strain [81][82][83], and temperature [83,84]. The development of these various sensors can provide many benefits to humans, such as preventing accidents from occurring caused by harmful elements such as toxic gases and ultraviolet, and enabling an accurate evaluation of the strength of products produced at manufacturing sites.…”