TiN films fabricated by reactive gas pulse sputtering: A hybrid design of multilayered and compositionally graded structures

Yang, Jijun; Zhang, Feifei; Wan, Qiang; Lu, Chenyang; Liao, Jiali; Yang, Yuanyou; Liu, Ning

doi:10.1016/j.apsusc.2016.07.062

Cited by 13 publications

(2 citation statements)

References 30 publications

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“…Over the past several years, TiN x thin films were extensively applied in the electronic and decoration industries due to their unique properties, such as extreme hardness, a high melting point, a high thermal conductivity, and a high resistance to corrosion etc [1][2][3][4][5]. In electronics, TiN x films can be used to process Π-type attenuators with outstanding properties [6,7], form very fine Schottky barrier contacts to Si and GaAs that are suitable for high temperature applications [1], make excellent ohmic contact on AlGaN/GaN layers to manufacture wide band gap AlGaN/GaN high electron mobility transistors [8], and process an embedded TiN source/drain structure to decrease parasitic resistance of an n-MOSFET [9].…”

Section: Introductionmentioning

confidence: 99%

Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic region

Lin

Zhan

Wang

et al. 2018

Semicond. Sci. Technol.

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Titanium nitride (TiN x ) thin films were deposited by DC magnetron sputtering on polished and oxidized silicon wafers under different N 2 flow rates, and temperature sensors based on the TiN x films were fabricated. The performance of three typical sensors were measured in the temperature range of 4.2 K-300 K, and the results indicate that TiN x thin film sensors are suitable for cryogenic temperature measurements. Furthermore, the conduction mechanism of TiN x thin film in the temperature range of 4.2 K-300 K was studied for the first time, and it can be described by an impurity conduction mechanism. Finally, the contribution of the grain and grain boundary on the film resistance and temperature coefficient of resistance was studied by AC impedance analysis, and the characterization result indicates that the impurity conduction mechanism of the TiN x thin film is dominated by the grain.

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Section: Introductionmentioning

confidence: 99%

Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic region

Lin

Zhan

Wang

et al. 2018

Semicond. Sci. Technol.

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“…Even though the TiN film contains yellow smarmy beauty and stability with high melting point of 2950 ℃, the corrosion problem has been an issue as a critical weak point [1]. In general, the thickness of TiN film, if used as medical biomaterial, is required to be thicker than 12μm to prevent this corrosion problem in case it is a TiN single layer.…”

Section: Introductionmentioning

confidence: 99%

Upgrading the Ti/TiN Film Depositions on KP-1 Steel by Using the Anode Ring Bias Voltage

Hwang

2018

AMR

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By newly adopting of a two-step bias voltage-sustained nitrification of the plasma process the titanium nitride films which applied to the mold base steel KP-1 are manufactured. The two-step process of biased voltages was introduced in order to consider microscopic kinematics of Ti ion bombardments which lead to a deep study on the plasmas including surface temperature of substrates associated with nitrification the KP-1 surface. For supplying of the additional biased voltage to the conventional coater, an anode-biased ring was installed near the plasma source and it ultimately upgraded the typical method of physical vapor depositions which uniquely adopted one bias voltage applied to the substrates because the additional ring controlled both ions and electrons effectively in order to improve surface smoothness and to increase surface hardness with various values of surface temperatures of substrate and deposition times. The discharge ionic current of titanium flux was measured as functions of both the ring bias voltage and the substrate voltage using single probe. By using plasma physics for the two-step bias voltages the discrete mean-free-times, due to cyclonic motions of ions by magnetic field, were studied to show the effects of two bias voltages. The maximal hardness increase of Ti/TiN films deposited on KP-1 was 370% when the surface temperature was 370 °C, the substrate bias voltage of 800volts, and the deposition time was 55 minutes after ring bias was applied. The 2000 times-magnified cross-sectional morphologies of TiN films deposited on the carbon mold base KP-1 were taken as a function of the ring anode bias. The 1000 times-magnified photograph of the TiN-filmed surface deposited on KP-1 mold base was taken to investigate the surface morphology. In order to examine the two-step bias test with respect to both the corrosion problem and the surface hardness, the 2000 times-magnified morphological photograph of a cross-sectional Ti/TiN film which was deposited on the KP-1steel mold was taken.

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Investigations on RF sputtered TiN thin films and Cu/TiO2/TiN devices for resistive switching memory applications

Sahu,

Das,

Ajimsha

et al. 2023

J Mater Sci: Mater Electron

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TiN films fabricated by reactive gas pulse sputtering: A hybrid design of multilayered and compositionally graded structures

Cited by 13 publications

References 30 publications

Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic region

Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic region

Upgrading the Ti/TiN Film Depositions on KP-1 Steel by Using the Anode Ring Bias Voltage

Investigations on RF sputtered TiN thin films and Cu/TiO2/TiN devices for resistive switching memory applications

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