Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering

Saji, K. J.; Mary, A. P. Reena

doi:10.1149/2.0091509jss

Cited by 33 publications

(26 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The interest in SnO thin film research got further ignited by the report of its use as a channel layer in a p-type thin film transistor (TFT) in the year 2008 [8]. After this, many reports have appeared regarding the deposition and characterization of SnO thin films, a vast majority of which were concentrated specifically for TFT applications [9][10][11][12][13][14][15]. In view of the numerous advantages of SnO over other p-type oxides, in this paper we made an attempt to review the recent developments in SnO thin film research for device applications.…”

Section: Introductionmentioning

confidence: 99%

“…However, precipitation of metallic Sn was observed at slightly higher sintering temperature (340 o C). Because of the difficulties associated with target preparation, majority of research groups have used either metallic Sn[9,14,43,46] or SnO 2 The optimum growth/annealing temperature strongly depends on the ambient oxygen partial pressure during the thin film growth/annealing process. Many groups have reported poly-crystalline SnO phase formation at around 300 o C for several different PVD growth techniques(table 4).We have demonstrated the growth of single phase SnO films on sapphire (0001) substrates over a temperature range of 250-550 o C. We used KrF laser with an energy density 1.8 J/cm 2 at 5 Hz repetition rate to ablate a sintered SnO target.…”

mentioning

confidence: 99%

See 1 more Smart Citation

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

et al. 2016

Self Cite

View full text Add to dashboard Cite

Tin monoxide (SnO) is considered as one of the most important p-type oxidesavailable to date. Thin films ofSnO have been reported to possess bothan indirect bandgap (~0.7 eV)anda direct bandgap (~2.8 eV) withquite highhole mobility (~7 cm 2 /Vs) values. Moreover, thehole density in these films can be tuned from 10 15-10 19 cm-3 just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p-n hetero-structure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices.

show abstract

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the view of TFT devices, a variety of oxide semiconductors has been demonstrated as suitable materials to fabricate high performance n-channel TFT devices; however, fabrication of a p-channel TFT with equal performance comparable to n-channel TFT is still a crucial challenge 6 . According to the Madelung’s potential theory 7 , the conduction band minimum (CBM) is mainly made of the metal cation and valence band maximum (VBM) of oxygen 2p orbitals in typical metal oxide materials.…”

Section: Introductionmentioning

confidence: 99%

“…The conduction band in n-type oxide semiconductors is mainly derived from large spherically symmetric metal ns orbital. The hybridization is hence not limited to the nearest metal cation but even extends to second neighbor metal cation, resulting in very low electron effective mass and maximum electron mobility 6 , 7 . On the other hand, the carrier conduction path (valence band) in p-type oxide semiconductors is mainly formed from oxygen p orbitals.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Tunability of p- and n-channel TiOx thin film transistors

Peng

Chen

et al. 2018

Sci Rep

View full text Add to dashboard Cite

To acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm2/Vs, while their on/off current ratios are 1.7 × 104 and 2.5 × 105, respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiOx-based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.

show abstract

2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors

Saji

Tian

Snure

et al. 2016

Adv Elect Materials

143

122

View full text Add to dashboard Cite

2D materials are considered promising candidates for developing next‐generation high‐performance energy efficient electronic, optoelectronic, and valley‐tronic devices. Though metal oxides are widely used in the fabrication of many advanced devices, very little work has been reported on their properties in 2D limit. This article reports the discovery of a new 2D materials system, 2D tin monoxide (SnO). Layer by layer growth of SnO on sapphire and SiO2 substrates is demonstrated using a pulsed laser deposition method. The number of SnO layers is controlled by controlling the number of laser shots during the deposition process. Raman spectroscopic and X‐ray photoelectron spectroscopic analysis confirms the formation of phase pure SnO layers. Field effect transistors (FETs) using few layer SnO channels grown on SiO2 substrates are successfully fabricated. These FETs show typical p‐channel conduction with field effect mobility ranging from 0.05 to 1.9 cm2 V−1 s−1. Field effect mobility varies with the number of SnO layers and decreases on either sides of the optimum layer numbers (12), which is explained based on charge screening and interlayer coupling in layered materials.

show abstract

Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering

Cited by 33 publications

References 28 publications

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Tunability of p- and n-channel TiOx thin film transistors

2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors

Contact Info

Product

Resources

About