Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE₂ and SnE (E = S, Se) thin films

Abstract

The molecular Sn(iv) complexes, [SnCl{BuS(CH)SBu}] (2), [SnCl(BuS)] (3) and [SnCl(BuSe)] (4) have been prepared in good yield from reaction of SnCl with the appropriate chalcogenoether ligand in anhydrous hexane and, together with the known [SnCl{BuSe(CH)SeBu}] (1), employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenide thin films. At elevated temperatures the bidentate ligand precursors, (1) and (2), also form the tin monochalcogenides, SnSe and SnS, respectively. In contrast, (3) gave a mixture of phases, SnS, SnS and SnS and (4) gave SnSe only. The morphologies, elemental compositions and crystal structures of the resulting films have been determined by scanning electron microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction and Raman spectroscopy. Van der Pauw measurements on the SnS, SnS and SnSe films confirm their resistivities to be 2.9(9), 266(3) and 4.4(3) Ω cm, respectively.

nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

“…Previous SSPs established within our own group, [SnCl 4 ( n BuE{CH 2 } 3 E n Bu)] (E = S or Se), were shown to produce films of SnS 2 or SnSe 2 via low pressure CVD, while at elevated temperatures films of the monochalcogenides, SnS or SnSe, can be produced. 32 Examples of other reported SSPs include, [{RNC(NMe 2 )NR}Sn(E)] (R = Cy, E = S and R = i Pr or Cy when E = Se), 15 [Sn n Bu 2 (S 2 CN(R) 2 ) 2 ] (R = Et, Me, n Bu), 33 [Sn(SeCOC 6 H 6 ) 2 Bu 2 )], 34 [Sn(SCH 2 CH 2 S) 2 ], 35 [Bz 3 SnCl(L)] (where L is thiosemicarbazones of salicylaldehye or 4-chlororbenzaldehyde), 36 [Sn(Ph 2 PSe 2 ) 2 ] 37 and [Sn({C 6 H 5 }NCSN{Me 2 })(NMe 2 )], 38 all of which have shown good quality depositions of SnS or SnSe. However, due to either the instability or low volatilities of these SSPs, film deposition required aerosol-assisted CVD processes.…”

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

“…[42] The use of single source precursors also leads to controlled adsorption and deposition at the growth interfaces, which results in improved control over the morphology. [43][44][45] Herein we report the controlled growth of SnSe nanowires via an atmospheric pressure CVD reaction from a single source diselenother precursor, [SnCl4{ n BuSe(CH2)3Se n Bu}]. The critical growth parameters for nanowire growth, as well as their crystal structure, were explored in detail.…”

“…[ 42 ] The use of single‐source precursors also leads to controlled adsorption and deposition at the growth interfaces, which results in improved control over the morphology. [ 43–45 ]…”

Chalcogenoether complexes of tantalum(V) sulfide trichloride – Synthesis, properties and structures

“…Addition of the one mol. equivalent of the dithioethers PhSCH2CH2SPh, MeSCH2CH2SMe, 17, Cl2−Ta1−S3 = 167.641 (17), S3−Ta1−S2 = 78.929 (14), S1−Ta1−Cl1 = 98.236 (17), S1−Ta1−Cl3 = 97.905 (18), S1−Ta1−Cl2 = 103.941 (19), S1−Ta1−S2 = 165.867 (16), S1−Ta1−S3 = 87.635 (17). The spectroscopic data are similar to those reported for the corresponding niobium systems [8].…”