TiN_xO_y/TiN dielectric contrasts obtained by ion implantation of ; structural, optical and electrical properties

Abstract

The properties of TiN can be gradually transformed by O 2 + implantations in the 10-40 KeV range and fluences in the 5.10 13-5.10 16 cm-2 range. The resulting structure consists of shallow TiN x O y (TiNO)/TiN contrasts with increased resistivity on the top layer. In fact, oxygen actively replaces nitrogen in the implanted TiN region as illustrated by Rutherford Backscattering Spectrometry. N substitutions and vacancies in the lattice induce structural distortions and strain generation as illustrated by X-ray diffraction, high resolution transmission electron microscopy and Raman spectroscopy. The influence of these modifications in the optical and electrical properties was characterized by spectroscopic ellipsometry and four probe resistivity measurements. The proposed process, especially at the lower energy, is liable to help in the creation of electrical/photonic structures based in shallow TiNO/TiN electric/dielectric contrasts.

Interface between cement paste and thin TiN film for corrosion resistance enhancement; structural, morphological and electrochemical properties

“…1(a). The peak corresponding to (2 0 0) presents higher intensity than the expected comparing with (1 1 1), which relates to a strong (2 0 0) preferred orientation [17]. Slight distortions in the diffraction angles of the peaks can be interpreted in terms of stress in the films, due to the significantly different thermal expansion coefficient between cement (30-40 Â 10 À6 /°C for 7 day-cured cement [18]) and TiN (6.8 Â 10 À6 /°C [19]).…”

Properties of titanium oxynitride films deposited on glass substrate by reactive high-power pulsed magnetron sputtering

“…TiON films have been prepared by various deposition techniques, such as magnetron sputtering, [13][14][15][16][17][18][19] pulsed laser deposition, 20,21) sol-gel methods, 22) and implantation of oxygen ions into TiN films. 23) Among these methods, reactive magnetron sputtering, which is one of physical vapor deposition (PVD) techniques, has been widely used to prepare TiON films with various composition ratios of oxygen and nitrogen. In magnetron sputtering with a Ti target, Ar gas has been generally employed as an ambient gas, while N 2 and O 2 mixture gases, [13][14][15]24,25) air, 16,26) and water and N 2 mixture gases 27) have been used as the reactive gases.…”