2005
DOI: 10.1016/j.crci.2005.02.052
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TiO2 sol–gel blocking layers for dye-sensitized solar cells

Abstract: The application of a thin, compact layer of TiO 2 on the conductive glass substrate in a dye-sensitized solar cell can prevent short-circuits in the solar cell and, therefore, prevent the back transfer of electrons by blocking direct contact between the electrolyte and the conductive substrate. In this work, it has been found that compact films of TiO 2 , produced by a sol-gel method and applied by dip-coating, increased the short-circuit current and efficiency of the solar cells. As the number of TiO 2 coatin… Show more

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Cited by 111 publications
(80 citation statements)
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“…This compact layer is much denser than the TiO 2 layer; therefore, it can reduce the contact surface area for bare FTO sites and the redox electrolyte (so-called blocking effect). Semiconductors, such as TiO 2 [15][16][17], Nb 2 O 5 [18], ZnO [19] and some insulating materials, such as CaCO 3 [20] and BaCO 3 [21], have been used as a blocking layer for the fabrication of DSSCs. Among them, the compact TiO 2 layer is the most suitable candidate as the blocking layer and has been investigated most frequently.…”
Section: Introductionmentioning
confidence: 99%
“…This compact layer is much denser than the TiO 2 layer; therefore, it can reduce the contact surface area for bare FTO sites and the redox electrolyte (so-called blocking effect). Semiconductors, such as TiO 2 [15][16][17], Nb 2 O 5 [18], ZnO [19] and some insulating materials, such as CaCO 3 [20] and BaCO 3 [21], have been used as a blocking layer for the fabrication of DSSCs. Among them, the compact TiO 2 layer is the most suitable candidate as the blocking layer and has been investigated most frequently.…”
Section: Introductionmentioning
confidence: 99%
“…그러나 금속전극을 도입할 경 우, 전해질의 유입이 용이하도록 다공질 혹은 메쉬 형태의 전극 구조가 용이하며, 전극표면과 전해질 사이의 불필요한 화학반응이나 역 전자전달 반응(Back electron transfer reaction)과 같은 셀 성능을 저하시키는 요인에 대한 대책이 요구된다 [8]. 구체적인 해결방안으로써, 다공질 혹은 메쉬 구 조의 금속전극을 도입하거나 [9,10], 전극표면에 산화물 층을 형성시켜 주위의 전해질로부터 전자가 유입되는 것을 차단 하는 방안 등이 모색되고 있다 [11]. 하지만 금속과 산화물 Table 1 Metal mesh electrode and membrane material.…”
Section: 서 론unclassified
“…The glass plates with the ITO transparent electrode were dip-coated 3 times with the S0 and then heated at 500ºC for 30 min in order to prepare the anatase-type titania electrodes. This layer plays the role as a blocking layer in order to suppress the charge recombination at the interface between the upper layer and the ITO layer (Cameron and Peter, 2003;Hart et al, 2006;Patrocinio et al, 2009). These electrodes were dip-coated 5 times with the S0 containing 0%, 0.10%, 1.0%, and 10% allophane and then steam-treated at 100°C for 120 min.…”
Section: Sample Preparationmentioning
confidence: 99%