Tip Avalanche Photodiode—A spherical-junction SiPM concept

Vinogradov, Sergey

doi:10.1016/j.nima.2022.167596

Cited by 1 publication

(4 citation statements)

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“…If the photosensitive volume is fully depleted, the collection charge transit times of planar and non-planar devices are defined by the configuration of the volume and should not be different for the same dimensions. In case of partial depletion, the charge collection includes diffusion process which results in a long tail in a distribution of charge carrier arrival times (see, e.g., TAPD single-photon time resolution histogram at 905 nm with a slow component of 100 ns [ 83 ]). However, in a properly tuned detector configuration for fast timing applications this situation should be avoided.…”

Section: Discussionmentioning

confidence: 99%

“…The plots of DQE vs. number of photons are very informative representations of the applicability and competitiveness of the detectors [ 30 , 31 ]. The DQE map for conventional photodetectors is shown in Figure 21 , where the main trends in SiPM development are marked by solid arrows (large pixels for high DQE, and small pixels to obtain high dynamic range), and the new trend of non-planar designs represented by TAPD (high PDE and small pixels) is marked by dashed lines [ 83 ].…”

Section: Discussionmentioning

confidence: 99%

“… Tip APD design: ( a ) concept of TAPD cell. Reproduced with permission from [ 83 ]; published by Elsevier, 2023. ( b ) 2D electric field distribution in the TAPD cell.…”

Section: Figurementioning

confidence: 99%

“… Detective quantum efficiency (DQE) vs. dynamic range in number of photons per pulse: a map of applicability and competitiveness of photodetectors. Reproduced with permission from [ 83 ]; published by Elsevier, 2023. …”

Section: Figurementioning

confidence: 99%

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Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

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Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

“… Tip APD design: ( a ) concept of TAPD cell. Reproduced with permission from [ 83 ]; published by Elsevier, 2023. ( b ) 2D electric field distribution in the TAPD cell.…”

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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