TiS<sub>3</sub> Transistors with Tailored Morphology and Electrical Properties

Island, Joshua O.; Barawi, Mariam; Biele, Robert; Almazán, Adrián; Clamagirand, José M.; Ares, J.R.; Sánchez, Carlos; Zant, Herre S. J. van der; Álvarez, J.; D’Agosta, Roberto; Ferrer, Isabel J.; Castellanos-Gómez, Andrés

doi:10.1002/adma.201405632

Cited by 209 publications

(318 citation statements)

References 43 publications

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“…Nevertheless, predicting mobility from theory provides valuable insight into the fundamental properties of materials. Recently, the anisotropic character of the carrier mobility in TiS 3 was also observed in an experimental study [21].…”

Section: Carrier Mobilitymentioning

confidence: 99%

“…A recent theoretical study reported that the carrier mobility in 2D monolayer TiS 3 is highly anisotropic, and the electron mobility along the b direction is of the order of 10 4 cm 2 V −1 s −1 [22]. The experimentally reported mobility of TiS 3 is of the order of 10 2 cm 2 V −1 s −1 for sheets and 10 0 cm 2 V −1 s −1 for ribbons [20,21]. The deviation between theoretical and experimental values stems from the fact that the TiS 3 materials in experiment are multilayers rather than a monolayer and that the presence of defects and a substrate in the experiment can affect the mobility to a large extent.…”

Section: Carrier Mobilitymentioning

confidence: 99%

“…In addition, several recent works have reported the synthesis of thin TiS 3 films and few-layer TiS 3 nanoribbons (TiS 3 NRs) [18][19][20][21]. The TiS 3 nanostructures exhibit a direct band gap of 1.1-1.2 eV, which may be interesting for possible replacement of Si in applications when high gain is needed [20].…”

Section: Introductionmentioning

confidence: 99%

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TiS3nanoribbons: Width-independent band gap and strain-tunable electronic properties

et al. 2015

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The electronic properties, carrier mobility, and strain response of TiS 3 nanoribbons (TiS 3 NRs) are investigated by first-principles calculations. We found that the electronic properties of TiS 3 NRs strongly depend on the edge type (a or b). All a-TiS 3 NRs are metallic with a magnetic ground state, while b-TiS 3 NRs are direct band gap semiconductors. Interestingly, the size of the band gap and the band edge position are almost independent of the ribbon width. This feature promises a constant band gap in a b-TiS 3 NR with rough edges, where the ribbon width differs in different regions. The maximum carrier mobility of b-TiS 3 NRs is calculated by using the deformation potential theory combined with the effective mass approximation and is found to be of the order 10 3 cm 2 V −1 s −1 . The hole mobility of the b-TiS 3 NRs is one order of magnitude lower, but it is enhanced compared to the monolayer case due to the reduction in hole effective mass. The band gap and the band edge position of b-TiS 3 NRs are quite sensitive to applied strain. In addition we investigate the termination of ribbon edges by hydrogen atoms. Upon edge passivation, the metallic and magnetic features of a-TiS 3 NRs remain unchanged, while the band gap of b-TiS 3 NRs is increased significantly. The robust metallic and ferromagnetic nature of a-TiS 3 NRs is an essential feature for spintronic device applications. The direct, width-independent, and strain-tunable band gap, as well as the high carrier mobility, of b-TiS 3 NRs is of potential importance in many fields of nanoelectronics, such as field-effect devices, optoelectronic applications, and strain sensors.

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Section: Carrier Mobilitymentioning

confidence: 99%

Section: Carrier Mobilitymentioning

confidence: 99%

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TiS3nanoribbons: Width-independent band gap and strain-tunable electronic properties

et al. 2015

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“…Recent calculations show that the interlayer potential (45 meV/atom), is less than that of MoS2 (60 meV/atom) and therefore should allow for exfoliation of the bulk down to a single layer. 46 Indeed, the 10 nm 9 thickness barrier was recently overcome through control of the morphology of the bulk material to produce flakes instead of ribbons. The flakes, with lower aspect ratio, allow exfoliation down to a single layer.…”

Section: Isolation and Exfoliation Of Mx3 Crystalsmentioning

confidence: 99%

“…46,48 This robust quality is in direct contrast with the TMDC layered materials which vary greatly with thickness and strain [49][50][51] . Moreover, mobilities for TiS3 transistors have been predicted to reach as high as 10000 cm 2 /Vs for the high mobility axis 26 and simple transistors, with 52 and without optimizations 46 , have been fabricated with reported mobilities as high as 70 cm 2 /Vs. The range of band gaps spanned by the TMTCs also makes them well suited for photodetection.…”

Section: Introductionmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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High Current Density Electrical Breakdown of TiS₃ Nanoribbon‐Based Field‐Effect Transistors

Molina‐Mendoza

Island

Paz

et al. 2017

Adv Funct Materials

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The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS 3 ) are studied here. The high breakdown current densities of up to 1.7 × 10 6 A cm −2 are observed in TiS 3 nanoribbon-based field-effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, a thermogravimetric analysis of bulk TiS 3 is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS 3 and subsequent desorption of sulfur atoms play an important role in the electrical breakdown of the material in ambient conditions. The results show that TiS 3 is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.

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TiS₃ Transistors with Tailored Morphology and Electrical Properties

Cited by 209 publications

References 43 publications

TiS3nanoribbons: Width-independent band gap and strain-tunable electronic properties

TiS3nanoribbons: Width-independent band gap and strain-tunable electronic properties

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

High Current Density Electrical Breakdown of TiS₃ Nanoribbon‐Based Field‐Effect Transistors

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TiS3 Transistors with Tailored Morphology and Electrical Properties

Cited by 209 publications

References 43 publications

TiS3nanoribbons: Width-independent band gap and strain-tunable electronic properties

TiS3nanoribbons: Width-independent band gap and strain-tunable electronic properties

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

High Current Density Electrical Breakdown of TiS3 Nanoribbon‐Based Field‐Effect Transistors

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Product

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TiS₃ Transistors with Tailored Morphology and Electrical Properties

High Current Density Electrical Breakdown of TiS₃ Nanoribbon‐Based Field‐Effect Transistors