2010
DOI: 10.1016/j.apsusc.2009.12.155
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Titanium buffer layer for improved field emission of CNT based cold cathode

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Cited by 25 publications
(13 citation statements)
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“…While the CNTs bond strongly to their growth catalysts, the catalyst-growth substrate adhesion is highly dependent on substrate preparation and catalyst deposition method. In many cases, CNT arrays can be removed intact from growth substrates 19 . As our growth substrate interface failed first, our adhesion tests give only a lower limit on CNT array-functionalized interface adhesion.…”
Section: Resultsmentioning
confidence: 99%
“…While the CNTs bond strongly to their growth catalysts, the catalyst-growth substrate adhesion is highly dependent on substrate preparation and catalyst deposition method. In many cases, CNT arrays can be removed intact from growth substrates 19 . As our growth substrate interface failed first, our adhesion tests give only a lower limit on CNT array-functionalized interface adhesion.…”
Section: Resultsmentioning
confidence: 99%
“…In fact, thin layers of different compounds (TiO 2 (De Los Arcos et al, 2004), Ti (Srividya et al, 2010), TiN (De Los Arcos et al, 2004;Hiramatsu et al, 2005;García-Céspedes et al, 2009;Lin et al, 2009;Terrado et al, 2009), Al (De Los Arcos et al, 2004;Lin, et al, 2009) have been used to prevent the formation of metal-silicides. In this way, dense mats of vertically aligned multiwall carbon nanotubes have been grown on TiN substrates by using different precursors, including ferrocene (García-Céspedes et al, 2009) or different metals as Fe (De Los Arcos et al, 2004;Srividya et al, 2010;Lin et al, 2009), Ni (Terrado et al, 2009), Co (Hiramatsu et al, 2005) or Fe-Co (Le Normand et al, 2008) as catalysts. Besides its electrically conductive properties, TiN seems to increase the quality of the grown CNTs (i.e., much thinner CNTs with higher density as compared with those obtained on Si substrates) (Terrado et al, 2009;Campo et al, 2019).…”
Section: Introductionmentioning
confidence: 99%
“…Another approach to improve FE properties is by decoration of CNTs apex by low work function materials 25 and introduction of various interlayers such as, Cr, W, Ti, Al, Au, Pd, Pt and Cu. The interlayers provide strong adhesion between CNTs and the substrates leading to better growth and restriction on formation of insulating silicide layers [26][27][28][29][30][31][32] at elevated temperatures. Generally, at high temperatures, the growth of CNTs is prohibited due to silicide formation and deactivation of nucleation sites.…”
Section: Introductionmentioning
confidence: 99%
“…Similar observation was made for CNTs grown on Si, without and with Ti buffer layer. 29 The stability was reported at relatively lower current (∼110 µA) for the first case, and in the second case the temporal stability was checked for a duration of about 1 hour. Better temporal stability at relatively higher current and longer duration was reported in the case CNTs having various morphologies like honey comb configuration, CNT carpet etc.…”
mentioning
confidence: 99%