1987
DOI: 10.1109/t-ed.1987.22964
|View full text |Cite
|
Sign up to set email alerts
|

Titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performance

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
26
0

Year Published

1989
1989
2024
2024

Publication Types

Select...
3
2
2

Relationship

0
7

Authors

Journals

citations
Cited by 75 publications
(27 citation statements)
references
References 21 publications
1
26
0
Order By: Relevance
“…Moreover, some values for NiSi can be found in the literature [4]- [7], but no solid database for NiSi-silicon contact resistance exists, particularly for a broad range of doping levels. Most of the research studying ρ c used cross-bridge Kelvin resistor (CBKR) structures, while in modern IC technology, one would tend to use transmission-line model (TLM) structures as they could be easier embedded in the standard self-aligned silicide CMOS process [8]. The advantage of the TLM structure over the CBKR one is that, in TLM structures, the silicide segments and the contact pads are made in one single-salicide process step.…”
Section: Motivationmentioning
confidence: 99%
See 1 more Smart Citation
“…Moreover, some values for NiSi can be found in the literature [4]- [7], but no solid database for NiSi-silicon contact resistance exists, particularly for a broad range of doping levels. Most of the research studying ρ c used cross-bridge Kelvin resistor (CBKR) structures, while in modern IC technology, one would tend to use transmission-line model (TLM) structures as they could be easier embedded in the standard self-aligned silicide CMOS process [8]. The advantage of the TLM structure over the CBKR one is that, in TLM structures, the silicide segments and the contact pads are made in one single-salicide process step.…”
Section: Motivationmentioning
confidence: 99%
“…On the other hand, PtSi has been studied thoroughly [3], [17]- [19], providing a good reference. Silicideto-silicon contact resistance was investigated using a set of optimized test structures with silicided segments of varying lengths, based on the Scott model for TLM structures [8], [20]. The validity of our results is based on the following: 1) systematic measurements and statistical data analysis (i.e., the represented data were averaged over 18 dies for each doping type and concentration), 2) experimental verification of the actual active doping concentrations and doping profiles by secondary ion-mass spectrometry (SIMS) and spreadingresistance-probe (SRP) techniques, 3) verification of the actual silicide lengths for different silicide segments by TEM analysis, and 4) optimizing the TLM structures in terms of the silicide lengths and the number of segments.…”
Section: Experimental Approachmentioning
confidence: 99%
“…The theoretical expression of the contact resistance contribution to the series source and drain resistance is expressed as [5]:…”
Section: A Transmission Line Modelmentioning
confidence: 99%
“…The extraction of the contact resistance contribution to the series source and drain resistance cannot be done using transistor measurements; appropriate test structures are necessary for contact resistance evaluation. The transmission line structure [5] is a useful and simple method to accurately describe the behavior of the silicide contact resistance. Silicide to silicon contact resistance is investigated using a set of dedicated test structures with silicided segments of varying lengths based on the Scott model [6].…”
Section: A Transmission Line Modelmentioning
confidence: 99%
See 1 more Smart Citation