Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

Alombert-Goget, G.; Li, H.; Faría, José; Labor, S.; Guignier, D.; Lebbou, K.

doi:10.1016/j.optmat.2015.11.016

Cited by 10 publications

(8 citation statements)

References 17 publications

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“…The charge state of implanted titanium in sapphire has been reported to be close to 3 + under the conditions used here but between 3 + and 4 + [20]. There is also a tendency for titanium 3 + and 4 + ions to segregate to the surface in sapphire [27]. To identify the doping sites of Ti, XPS was carried out to characterise the surface chemical composition (Fig.…”

Section: Mechanism Of Implantation-induced Changes In Adsorbate Concementioning

confidence: 81%

Investigation of Chemomechanical Effects on Sapphire Surfaces Modified by Ion-Implantation-Induced Carbon Impurities

2021

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Modification of the chemomechanical behaviour of the surface of sapphire by ion implantation to improve its near-surface mechanical properties has been investigated. 300 keV Ti+ ions at various doses were implanted and the concentration and damage profiles characterised using Rutherford Backscattering (RBS). At high doses (≥ 3 × 1016 Ti+ cm−2), a surface amorphous layer is formed due to implantation-induced damage. Nanoindentation was used to determine the hardness behaviour of the ion-implanted layer. Hardness increases at low implantation doses, associated with implantation-induced damage, but it is also observed that chemomechanical softening of the surface is reduced due to the removal of adsorbed water. In situ Raman scattering measurements demonstrate this removal at low doses and the re-establishment of the adsorbed water layer at high doses. The adsorption process is changed due to the introduction of carbon into the sapphire surface during implantation. For the optimum-implanted dose, the water readsorption does not recur even several years after the implantation treatment was first carried out. The loss of water adsorption is related to the formation of a non-polar carbonaceous layer on the sapphire surface by cracking of back-streamed diffusion pump oil deposited on the sample surface by inelastic collisions with the ion beam. Based on this study, it is concluded that ion implantation with an appropriate ion species and dose can control the chemomechanical effect and improve the hardness of ceramics, such as sapphire.

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Section: Mechanism Of Implantation-induced Changes In Adsorbate Concementioning

confidence: 81%

Investigation of Chemomechanical Effects on Sapphire Surfaces Modified by Ion-Implantation-Induced Carbon Impurities

2021

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“…The main growth methods for Ti:sapphire laser crystals include vertical-gradient-freeze (VGF) technique, 37,38 heatexchanger method (HEM), 39,40 Czochraksi method (CZM), 41,42 flame-fusion method (FFM), 43 horizontally directed crystallization method (HDCM), 44 and Kyropoulos (Ks) technique. 45 The largest Ti:sapphire crystal of 235 mm diameter was currently produced by HEM and was successfully used in the 10 PW system.…”

Section: Ti:sapphire Laser Materialsmentioning

confidence: 99%

Review of laser‐diode pumped Ti:sapphire laser

Liu

Sun

Zheng

et al. 2021

Micro & Optical Tech Letters

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Ti:sapphire laser has an important position in ultrashort pulse generation and wavelength tuning. The use of expensive frequency-doubled diode-pumped solid-state laser as the pump source limits the promotion of its application to a certain extent. With the maturity of high-power bluegreen laser diodes (LDs), low-cost LD directly pumped Ti: sapphire laser becomes possible. After more than 10 years of development, the output parameters of LD pumped Ti: sapphire lasers have been greatly improved. Moreover, the lasers have been applied to optical frequency combs, multiphoton microscopy imaging, and so forth, both of which have achieved impressive results.

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“…The quality of the crystal can be improved by knowledge of the growth process's growth parameters and phenomena (Alombert-Goget et al, 2016). A single crystal of Ti: Al2O3 can be grown by several methods, i.e., Verneuil method (Alombert-Goget et al, 2016), kyropoulos (Ky) method (C. H. Chen et al, 2012;Gao et al, 2015;Nehari et al, 2011;Sen et al, 2020;C. Stelian et al, 2016;Carmen Stelian et al, 2017), temperature gradient technique (TGT) (Ren et al, 2016;G.…”

Section: Introductionmentioning

confidence: 99%

“…Stelian et al, 2016;Carmen Stelian et al, 2017), temperature gradient technique (TGT) (Ren et al, 2016;G. Zhou et al, 2006), heat exchange method (HEM) (Dong & Deng, 2004;Joyce & Schmid, 2010), vertical gradient freeze (VGF) method, hydrothermal technique (Song et al, 2005;Wang et al, 2009), micro-pulling down (-PD) (Ghezal et al, 2012;Kamada et al, 2018;Zhou et al, 2015), Bridgman method (Han et al, 2020) and Czochralski (Cz) (Alombert-Goget et al, 2016;FIELITZ et al, 2008;Hur et al, 2017;Li et al, 2013Li et al, , 2014.…”

Section: Introductionmentioning

confidence: 99%

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Estimation of Crystallite Size, Density, and Compositional of the Ti: Al2O3 Single Crystal

2020

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The purposes of this research were to estimate the crystallite size, density, and chemical composition of the ingot Ti: Al2O3 crystal grown by the Czochralski method. The crystallite size and composition of Ti: Al2O3 crystals had been determined using x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDXS). Based on the Archimedes principle, the density of the crystals had been determined. The XRD patterns showed a single central peak with high intensity for all samples. It indicated that all samples had a single crystal. The average value of the samples' crystallite size was in the range of 20.798 nm to 34.294 nm. The ingot crystal density and Ti composition increased from the top to the bottom part because the solid solution was distributed unevenly during the growth process.

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Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

Cited by 10 publications

References 17 publications

Investigation of Chemomechanical Effects on Sapphire Surfaces Modified by Ion-Implantation-Induced Carbon Impurities

Investigation of Chemomechanical Effects on Sapphire Surfaces Modified by Ion-Implantation-Induced Carbon Impurities

Review of laser‐diode pumped Ti:sapphire laser

Estimation of Crystallite Size, Density, and Compositional of the Ti: Al2O3 Single Crystal

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