The surface of titanium nitride (TiN) contains, in addition to nitride compounds, a certain amount of native oxide. This oxide allows the functionalization of TiN with amine‐terminated groups through spontaneous self‐assembly of aminoethylphosphonic acid. However, real industrial applications of titanium nitride, particularly for microelectronics and electrochemistry, require the development of efficient methods to improve the aminoethylphosphonate loading while preserving the main intrinsic characteristics of the TiN substrate. It is demonstrated that surface pretreatment, by either electrochemical anodization or cleaning in H2O2:HCl:H2O mixture, considerably enhances the phosphonic loading. This is the first report on mild oxidation of TiN surface using an acidic peroxide mixture. This electrochemical‐assisted method does not require any electrochemical equipment, and works through simple immersion of the TiN surface in the cleaning solution at room temperature. Moreover, cleaning in this solution leads to a significantly increased quantity of the grafted phosphonate groups via uniform hydroxylation of the entire surface, without altering the behavior of the pristine TiN. The electrochemical anodization technique, which results in quasicomplete conversion of surface TiN compounds to TiO2 under our working conditions, needs further fundamental investigation towards incorporation of oxygen into the TiN lattice.