2021
DOI: 10.1149/1945-7111/ac30aa
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Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications

Abstract: Extended-Gate Field-Effect Transistor (EGFET)-based pH sensors are cost-effective alternatives to well-established Ion-Sensitive Field-Effect Transistor (ISFET) technology for chemical/biochemical sensing applications. In this work, a ∼70 nm thin sensing film of Titanium Nitride (TiN) was deposited on Indium-Tin Oxide (ITO)-coated glass substrate using a pulsed-DC magnetron-assisted reactive sputtering technique to fabricate EGFET electrode. TiN-EGFET sensor electrode was electrically connected to the gate ter… Show more

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Cited by 6 publications
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“…With measurements of voltage capacitance as a function of phosphate concentration, it is possible to extract the Vfb values for each of the phosphate concentration values, thus obtaining the Vfb curves as a function of phosphate concentration, as shown Figure 5, and thus, obtain the sensitivity value for phosphate which is shown in Figure 6. In the literature we did not find sensors equal to what was proposed in this work, so for comparison purposes, we used studies that use sensors with the same principle to evaluate pH solution, in these works the sensitivity values vary between 51.32 mV/pH [28], 58.3_mV/pH [29] and 61 mV/pH [30], values close to the Nernst number ~59.2 mV/pH.…”
Section: B Electrical Characterizationmentioning
confidence: 99%
“…With measurements of voltage capacitance as a function of phosphate concentration, it is possible to extract the Vfb values for each of the phosphate concentration values, thus obtaining the Vfb curves as a function of phosphate concentration, as shown Figure 5, and thus, obtain the sensitivity value for phosphate which is shown in Figure 6. In the literature we did not find sensors equal to what was proposed in this work, so for comparison purposes, we used studies that use sensors with the same principle to evaluate pH solution, in these works the sensitivity values vary between 51.32 mV/pH [28], 58.3_mV/pH [29] and 61 mV/pH [30], values close to the Nernst number ~59.2 mV/pH.…”
Section: B Electrical Characterizationmentioning
confidence: 99%
“…28,29 These characteristics endow TiN with fascinating applications in numerous fields, such as phototherapy, nonlinear optics, energy storage and microelectronics. [30][31][32][33][34][35] The electrical properties of TiN are tied to the synthetic process and its microstructure. 36 Compared with their single counterparts, TiN-based heterostructures can provide more electron transfer paths and active sites, enhancing catalytic activity.…”
mentioning
confidence: 99%