Transition metal nitrides and carbides are well known materials possessing a number of useful properties such as high hardness, high thermal stability, and metal-like conductance. Despite having similar properties however, transition metal phosphides are relatively unexplored, although they have found application as wear-and corrosion-resistant coatings.[1] Vanadium phosphide is known in a number of different stoichiometries, ranging from the metal-rich V 3 P through V 2 P and VP to the phosphorus-rich VP 2 .[2]There is also an intermediate phase, sometimes identified as V 0.5¼1 P, which has been crystallographically characterized as V 12 P 7 .[3] Thin films of titanium(III) phosphide have been produced by the gas-phase reaction of TiCl 4 and PCl 3 under an argon/hydrogen atmosphere at 850±1050 C, but the high reaction temperature limits the choice of substrate for the deposition process.[4] Films of TiP [5,6] and niobium(III) phosphide [7] have been produced from single-source precursors using low pressure (LP) CVD conditions at much lower temperatures (~600 C) and previously, Watson et al. reported the synthesis of thin films of chromium phosphide via a low pressure pyrolysis reaction of the precursor Cr(CO) 5 (PH 3 ). [8] Recently, thin films of titanium phosphide, [9] tantalum phosphide, [10] and molybdenum phosphide [11] have been deposited from the reaction of metal halide with cyclohexylphosphine (Cy hex PH 2 ) using atmospheric-pressure (AP) CVD conditions. However, when extending this methodology to the reaction of VCl 4 with Cy hex PH 2 , it was concluded that film deposition required higher process temperatures than the other group Vb elements.[12] It has previously been shown that vanadium carbonitride films can be grown under LP-CVD conditions using tetrakisdialkylamidovanadium precursors. [13,14] This employed a single-source CVD precursor strategy that relies on an inbuilt Achilles heel' for decomposition (amine elimination). Homoleptic metal amide complexes have often been used as single-source MN precursors, however the homoleptic amides often form metal carbonitrides through incorporation of carbon from the amide. One way to circumvent this problem is to use a secondary nitrogen source such as ammonia in a dual-source CVD approach. This suppresses the carbon content, but labeling studies indicate that the nitrogen incorporated in the films comes from the ammonia and not the carefully tailored precursor. [15] This fact led us to examine whether the homoleptic metal amides could function as precursors to other films without incorporating any nitrogen. Here we report the first mixed precursor approach to using metal amides and phosphines to form metal phosphide coatings. Surprisingly, despite the four M±N bonds in the precursor, a metal phosphide is preferentially formed. The AP-CVD of V(NMe 2 ) 4 alone deposited thin films (~100 nm thick for 1 min run time at substrate temperature of 550 C) of composition V x N y C z (where x » y » z) at substrate temperatures of 500 C and above. This result is si...