TiTe/Ge₂Sb₂Te₅Bi-layer-based Phase-Change Memory Targeting Storage Class Memory

Abstract

In this work, we introduce an innovative Phase-Change Memory (PCM) based on a TiTe and Ge 2 Sb 2 Te 5 (GST) bi-layer stack that presents low resistance variability since the out-of-fabrication in 4 kb array. It allows creating reliably an intermixed system right from the first programming in the active volume of the device. TiTe/GST PCM exhibits higher speed, lower variability of intermediate resistance states and lower drift compared to standard GST. An endurance of more than 10 8 cycles can be achieved and we found a reduced cycle-to-cycle variability even after endurance stress. Such new TiTe/GST stack, based on our results, demonstrates to be a valuable candidate for PCM targeting Storage Class Memory applications.