Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Pressel, K.; Weber, J.; Hiller, C.; Ottenwälder, D.; Kürner, W.; Dörnen, A.; Scholz, F.; Locke, K.; Wiedmann, D.; Cordeddu, F.

doi:10.1063/1.107836

Cited by 13 publications

(4 citation statements)

References 7 publications

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“…As in the previous reports, we therefore attribute the observed emission in our samples to the 4f-4f intracenter transitions between the lowest Tm 3+ crystal-field-split spinorbit levels ͑ 3 H 5 ͒ and the ground state ͑ 3 H 6 ͒, which should give a maximum of five transitions at low temperatures when only the lowest of the 3 H 5 manifold states is occupied. 4 The additional lines, also observed in the GaAs and AlGaAs systems, were attributed either to some distortion of the Tm 3+ ion from the simple T d site to a site of lower symmetry or the contribution of Tm 3+ complexes. Given that Tm 3+ complexes are unlikely to identically occur in silicon and GaAs, our results support the first explanation of reduced Tm 3+ site symmetry.…”

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confidence: 89%

“…Light emission in III-V semiconductors ͑GaAs, GaInP, GaP, InP, and AlGaAs͒ incorporating Tm 3+ has been previously reported. [3][4][5][6][7][8][9] Photoluminescence ͑PL͒ spectroscopy at low temperatures was the main technique utilized to optically characterize these materials. Luminescence was observed around 0.8, 1.2, and 1.9 m and attributed to transitions between the lowest Tm 3+ crystal-field-split spin-orbit levels ͑ 3 F 4 , 3 H 5 , and 3 H 4 ͒ and the ground state ͑ 3 H 6 ͒, respectively.…”

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confidence: 99%

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Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Lourenço

Gwilliam

Homewood

2008

Applied Physics Letters

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Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2–1.35μm range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm3+ state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained by codoping of boron to reduce the thermal quenching. Seven sharp lines are observed, corresponding to known internal Tm3+ transitions in the manifold from the H53 to the H63 ground states. This center, together with the basic 1.15μm silicon emitters and Si:Er devices operating at 1.54μm, now enables significant coverage of the extended (1.1–1.8μm) optical communications band in silicon.

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confidence: 89%

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confidence: 99%

Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Lourenço

Gwilliam

Homewood

2008

Applied Physics Letters

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“…3(b) [7,8]. The transitions identified here have been previously observed in crystals [9][10][11] and also in GaAs and GaInP [12]. Table 1 summarizes the main peaks identified in other systems as well as in Si (this work).…”

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confidence: 65%

Eye-safe 2μm luminescence from thulium-doped silicon

2011

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We report on photoluminescence in the 1:7-2:1 μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80 K; at 300 K, the spectrum is dominated by the main emission at 2 μm. These emissions are attributed to the trivalent Tm 3þ internal transitions between the first excited state and the ground state. © 2011 Optical Society of America OCIS codes: 250.5230, 140.3070, 160.5690, 160.6000. Light emission in the eye-safe 2 μm region is of considerable interest, in particular for medical applications, but also for gas sensing systems and direct free space optical communications. Although 2 μm Tm lasers are now commercially available [1], they are fabricated only in insulating crystals and fiber materials and as a result can be pumped only optically. To achieve electrical pumping, a semiconductor host is required. Because competing radiative transitions across the bandgap are detrimental, indirect rather than direct gap semiconductors are the preferred host, and of these, silicon is by far the most technologically important. In addition, loss mechanisms such as two-photon absorption are reduced by orders of magnitude in indirect rather than direct gap transitions because of the need for the involvement of phonons to conserve momentum. The incorporation of rare-earth (RE) elements into semiconductors, crystals, and glass fibers has been extensively used as optical sources in such materials. The optical transitions that originate from the RE partially filled inner 4f shell are sharp and generally insensitive to the host and temperature variations and can enable light emission throughout the visible to the IR regions. Among the RE elements, thulium is a particularly interesting optical source. The transitions between the three Tm 3þ lower excited states ( 3 H 4 , 3 H 5 , and 3 F 4 ) and the ground state ( 3 H 6 ) can lead to light emission in the 0.8, 1.2, and 2:0 μm regions [2]. Luminescence in the 1:2 μm range has been observed in silicon substrates incorporating Tm, and a Tm:Si-based LED operating at low forward bias has been demonstrated [3,4]. Light emission in the 0:8-2:0 μm range from III-V substrates doped with Tm has also been shown-a summary of previously published work can be found in [3]. A Tm:YAG laser operating at 2 μm was first demonstrated in 1965 [5] and has led to commercial lasers being fabricated in a variety of host crystals and fiber materials [1]. In this Letter, we report on photoluminescence (PL) in the 1:7-2:1 μm region from silicon substrates doped with Tm.Samples were fabricated by ion implantation of 10 13 Tm cm −2 at 400 keV into an n-type Si [100] substrate (2-7 Ω cm) previously implanted with 10 15 B cm −2 at 30 KeV. Subsequently samples were annealed in a nitrogen atmosphere at 850°C for 1, 5, and 15 min. As a reference, Tm was also implanted at the same dose and energy into a Si substrate that did not contain boron and subsequentl...

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“…Because of this thermal quenching, the 41-shell luminescence at room temperature has been observed for only a few materials such as GaAs:Er,1 GaP:Nd,2 and GaInP:Tm. 3 To increase the luminescence efficiency and obtain strong luminescence, it is necessary to clarify the energy transfer mechanism. Although the energy transfer process determines the optical properties of RE-doped semiconductors, it is not yet clearly understood for materials other than InP:Yb.…”

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confidence: 99%

Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts

Taguchi

Takahei

1996

SPIE Proceedings

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We have proposed an energy transfer model, which explains the experimentally observed electronic and optical properties of Yb-doped InP: the Yb 4shell is excited by recombination of an electron-hole pair at an electron trap, which is formed by Yb. Quenching of the 4fshell luminescence at elevated temperatures is explained by the reverse of the excitation process. The energy transfer process requires an energy compensation mechanism, since there is an energy mismatch between the recombination energy of the electron-hole pair and the Yb 4/-shell energy. By assuming that the energy transfer is assisted by a nonradiative multiphonon transition process, the optical properties are well explained, and the transition matrix element is estimated. When this multiphonon-assisted transition mechanism is applied to an Er luminescence center in GaAs, the calculated temperature dependence of the Er 4fshell luminescence agreed well with the experimental results. The energy transfer model should be generally applicable to rare-earth doped semiconductors.

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Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Cited by 13 publications

References 7 publications

Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Eye-safe 2μm luminescence from thulium-doped silicon

Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts

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