TO(<b>Γ</b>) mode resonances in the rare-earth nitrides

Holmes-Hewett, W. F.; Buckley, R. G.; Butler, Tane; Pot, Catherine; Koughnet, K. Van; Ruck, B. J.; Trodahl, Joe

doi:10.1063/5.0098290

AIP Advances

2022

DOI: 10.1063/5.0098290

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TO(Γ) mode resonances in the rare-earth nitrides

W. F. Holmes-Hewett

R. G. Buckley

Tane Butler

et al.

Abstract: Far infrared measurements of the absorption into the IR-active TO(Γ) mode are reported for a selection of the rare-earth mononitrides. The frequencies harden as anticipated by ≈15% as the lattice constant shrinks by ≈6% from SmN to LuN, though they are typically ∼25% softer than the LSDA+ U prediction published a decade ago. The data are in much closer agreement with our computation based on more recent software for two in the series: GdN and LuN. The resonances show surprisingly heavy damping, diminishing fro… Show more

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Cited by 3 publications

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Indications of a ferromagnetic quantum critical point in $$\textrm{SmN}_{1-\delta }$$

Holmes-Hewett,

Van Koughnet,

Miller

et al. 2023

Sci Rep

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We investigate the previously observed superconductivity in ferromagnetic SmN in the context of the breakdown of order between two magnetic phases. Nitrogen vacancy doped SmN$$_{1-\delta }$$ 1 - δ is a semiconductor which lies in the intermediary between ferromagnetic SmN and anti-ferromagnetic Sm. Optical data reported here corroborate the prediction that electrical transport is mediated by Sm 4f defect states, and electrical transport measurements characterise the metal-insulator transition over the doping range. Our measurements show that the superconducting state in nitrogen vacancy doped $$\textrm{SmN}_{1-\delta }$$ SmN 1 - δ is the most robust near the breakdown of magnetic order, and indicate the location of a quantum critical point. Furthermore we provide additional evidence that the superconducting state is formed from majority spin electrons and thus of unconventional S = 1 type.

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Indications of a ferromagnetic quantum critical point in $$\textrm{SmN}_{1-\delta }$$

Holmes-Hewett,

Van Koughnet,

Miller

et al. 2023

Sci Rep

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show abstract

Defect-activated versus intrinsic Raman spectra of GdN and LuN

et al. 2023

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We report Raman studies of GdN and LuN, two of the rare-earth mononitrides that form a series of mostly intrinsic ferromagnetic semiconductors. Their rock-salt structure supports no first-order Raman scattering, but, nonetheless, we find a density-of-modes pattern expected for nearly point-defect scattering, an intrinsic twophonon scattering spectrum, and an LO feature that appears independent of defect concentration. The results are compared with the phonon dispersion calculated within a density functional theory treatment indicating that computed phonon frequencies are smaller than measured, with the disagreement rising to ∼30% for the TA branch. Contrary to the previous assumption of defect-induced scattering at the L point, we propose that the observed LO feature arises from LO( ) scattering induced by the Fröhlich interaction, similar to what has been observed in YbS.

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Synthesis of Samarium Nitride Thin Films on Magnesium Oxide (001) Substrates Using Molecular Beam Epitaxy

Vallejo,

Cresswell,

Buturlim

et al. 2024

Crystals

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Rare-earth nitrides are an exciting family of materials with a wide variety of properties desirable for new physics and applications in spintronics and superconducting devices. Among them, samarium nitride is an interesting compound reported to have ferromagnetic behavior coupled with the potential existence of p-wave superconductivity. Synthesis of high-quality thin films is essential in order to manifest these behaviors and understand the impact that vacancies, structural distortions, and doping can have on these properties. In this study, we report the synthesis of samarium nitride monocrystalline thin films on magnesium oxide (001) substrates with a chromium nitride capping layer using molecular beam epitaxy (MBE). We observed a high-quality monocrystalline SmN film with matching orientation to the substrate, then optimized the growth temperature. Despite the initial 2 nm of growth showing formation of a potential samarium oxide layer, the subsequent layers showed high-quality SmN, with semiconducting behavior revealed by an increase in resistivity with decreasing temperature. These promising results highlight the importance of studying diverse heteroepitaxial schemes and open the door for integration of rare-earth nitrides and transition metal nitrides for future spintronic devices.

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TO(Γ) mode resonances in the rare-earth nitrides

Cited by 3 publications

References 31 publications

Indications of a ferromagnetic quantum critical point in $$\textrm{SmN}_{1-\delta }$$

Indications of a ferromagnetic quantum critical point in $$\textrm{SmN}_{1-\delta }$$

Defect-activated versus intrinsic Raman spectra of GdN and LuN

Synthesis of Samarium Nitride Thin Films on Magnesium Oxide (001) Substrates Using Molecular Beam Epitaxy

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