Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Damilano, B.; Coulon, Pierre-Marie; Vézian, S.; Brändli, Virginie; Duboz, J.-Y.; Massies, J.; Shields, P. A.

doi:10.7567/1882-0786/ab0d32

Cited by 22 publications

(30 citation statements)

References 30 publications

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“…Sublimation has been recently proposed as a simple top-down route to form nanostructures such as nanorods, nanopyramids, InGaN quantum discs or nanoporous material from GaN-based material without introducing the damage that occurs in dry etching 61–63 . By protecting the GaN surface with a thermally resistant dielectric layer and then annealing the sample under vacuum and sufficiently high temperatures, selective area sublimation of GaN can be carried out through the apertures of the mask.…”

Section: Resultsmentioning

confidence: 99%

“…However, sublimation is sensitive to structural defects 64 , occurs not only vertically but also laterally, and is only suitable for GaN and InGaN materials; not AlGaN with more than 10% Al 65 . Therefore, although promising for photonic applications and the nanostructuring of GaN materials 62,63,65,66 , ICP dry etching provides more flexibility on the type of materials that can be patterned and on the nanostructure profile.…”

Section: Resultsmentioning

confidence: 99%

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Displacement Talbot lithography for nano-engineering of III-nitride materials

et al. 2019

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Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Displacement Talbot lithography for nano-engineering of III-nitride materials

et al. 2019

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“…The NWs are produced by employing nano-patterning techniques such as lithography (optical and e-beam) [25,86,87], nanosphere based patterning [88,89], laser interference lithography [90,91], etc. The etching could be done using dry plasma process [92,93] or acid based wet chemical etching [25,86,87,91]. Dry etching methods have merits such as high precision, uniformity over wafer scale, scalability etc., but they could also lead to stress generation due to high energy plasma and isotropic lateral etching issues.…”

Section: Top-down Approachmentioning

confidence: 99%

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

et al. 2020

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The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

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“…However, the process was reported to be strongly sensitive to threading defects, resulting in the formation of pores under the mask and, therefore, with a poor organization of nanoholes overall and poor uniformity of the nanohole dimensions. More recently, Damilano and co-authors reported several works on the selective area sublimation (SAS) of nanorods and nanoholes having a straight sidewall profile, achieved in a molecular beam epitaxy (MBE) chamber either from a SiN x self-organized mask 15,31 , or a SiN x nanopatterned mask 32,33 . With their conditions, nanorods and nanoholes with a high organization and fairly uniform dimensions were successfully achieved 32,33 .…”

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confidence: 99%

“…More recently, Damilano and co-authors reported several works on the selective area sublimation (SAS) of nanorods and nanoholes having a straight sidewall profile, achieved in a molecular beam epitaxy (MBE) chamber either from a SiN x self-organized mask 15,31 , or a SiN x nanopatterned mask 32,33 . With their conditions, nanorods and nanoholes with a high organization and fairly uniform dimensions were successfully achieved 32,33 . Despite the successful formation of nanoholes, few technical details have been provided on the impact of the thermal etching environment on the morphology of the nanohole arrays.…”

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confidence: 99%

Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

Coulon

Feng

Damilano

et al. 2020

Sci Rep

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Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features with extremely high aspect ratios without introducing ion-related etch damage. We report how SATE can create uniform and organized GaN nanohole arrays from c-plane and (11-22) semi-polar GaN in a conventional MOVPE reactor. The morphology, etching anisotropy and etch depth of the nanoholes were investigated by scanning electron microscopy for a broad range of etching parameters, including the temperature, the pressure, the NH 3 flow rate and the carrier gas mixture. The supply of NH 3 during SATE plays a crucial role in obtaining a highly anisotropic thermal etching process with the formation of hexagonal non-polar-faceted nanoholes. Changing other parameters affects the formation, or not, of non-polar sidewalls, the uniformity of the nanohole diameter, and the etch rate, which reaches 6 µm per hour. Finally, the paper discusses the SATE mechanism within a MOVPE environment, which can be applied to other mask configurations, such as dots, rings or lines, along with other crystallographic orientations. Nanostructures are continuously drawing the attention of the III-nitride community for their success in improving light emitting devices 1-4 and their use for emerging applications such as water splitting 5 , single photon sources 6 , piezoelectric nanogenerators 7 or solar light harvesting 8. Among the different geometries available, arrays of nanoholes, in the form of a porous or two-dimensional photonic crystal (2D PhC) layer, have been widely investigated. On one side, a porous layer can provide a change in refractive index 9,10 , an increased surface area resulting in both higher sensitivity 11 and larger photocurrent 12,13 , a more efficient light extraction due to enhanced scattering 14,15 , and improved crystal quality by reducing strain and dislocation density 16-19. On the other side, a 2D PhC layer allows one to enhance the IQE thanks to the Purcell effect, increase the light extraction efficiency and improve/control the directionality of III-nitride based light emitting diodes (LED) 20-23. As such, networks of nanoholes have been used in several applications such as distributed Bragg reflectors 10 , sensors 11 , hydrogen generation 12,13 , LEDs 14,22,23 , free-standing GaN films 17 , and energy storage 18,19. The fabrication of nanohole arrays is usually achieved from a III-nitride layer or an LED structure via a subtractive process or what is called a top-down approach. Porous layers are generally obtained from GaN layers by various techniques, such as electrochemical etching 9,11,14,16 , photo-electrochemical etching 12,13 , metal assisted chemical etching 24,25 , and high temperature annealing with 26 , or without, a catalyst 15,17-19,27,28. Although the depth of the pores can reach a few microns 13,17-19,24,2...

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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Cited by 22 publications

References 30 publications

Displacement Talbot lithography for nano-engineering of III-nitride materials

Displacement Talbot lithography for nano-engineering of III-nitride materials

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

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