Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator

Zhou, Fan; Lin, Haipeng; Zhang, L.; Li, J.; Zhang, X.W.; Yu, Dong-Bin; Jiang, Xue-Yin; Zhang, Z.L.

doi:10.1016/j.cap.2011.06.006

Cited by 21 publications

(7 citation statements)

References 14 publications

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“…Fig. 4 show the evolution of the transfer curves as a function of the NBIS time for devices A, 7 B, C and D, respectively. As seen in Fig.…”

Section: Resultsmentioning

confidence: 98%

“…In particular, metal oxide semiconductor thin films with wide energy bandgap materials such as ZnO, InGaZnO and InZnO (IZO) enable the transparent electronic or display to be realized. So far, although researchers have conducted a lot of research to improve performances of thin film transistors [3][4][5][6][7] , there are still some issues need to be resolved. Such as how to control the threshold voltage for circuit design and power consumption, the mechanism of device instability and how to improve the stability under various stresses for example, bias, illumination and temperature.…”

Section: Introductionmentioning

confidence: 97%

See 1 more Smart Citation

Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness

Huang

Ding

et al. 2015

Superlattices and Microstructures

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“…Fig. 4 show the evolution of the transfer curves as a function of the NBIS time for devices A, 7 B, C and D, respectively. As seen in Fig.…”

Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 97%

Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness

Huang

Ding

et al. 2015

Superlattices and Microstructures

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“…Among them we find vacuum sublimation of organic (small-molecule) semiconductors, and RFmagnetron sputter coating of metal-oxide semiconductors. Inorganic gate dielectrics are also frequently deposited by vacuum deposition methods, such as PECVD [93], [94], sputter coating [95], [96] and atomic layer deposition (ALD) [97]. These techniques generally afford greater control of composition and microstructure than solution-based methods.…”

Section: Vacuum-based Versus Solution-based Methodsmentioning

confidence: 99%

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Pecunia

Fattori

Abdinia

et al. 2018

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Recent years have witnessed significant research efforts in flexible organic and amorphous-metal-oxide analogue electronics, in view of its formidable potential for applications such as smart sensor systems. This Element provides a comprehensive overview of this growing research area. After discussing the properties of organic and amorphous-metal-oxide technologies relevant to analogue circuits, this Element focuses on their application to two key circuit blocks: amplifiers and analogue-to-digital converters. The Element thus provides a fresh look at the evolution and immediate opportunities of the field, and identifies the remaining challenges for these technologies to become the platform of choice for flexible analogue electronics.

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“…PECVD and other above-mentioned techniques have common limitations of higher equipment cost and/or longer processing duration as compared with thermal evaporation. Furthermore, in commonly used PECVD and sputtering techniques, plasma damage or shallow ion implantation may occur during the device fabrication process, which could have detrimental effects on the electrical characteristics of GaN HEMTs [24,25]. Due to the simple technique and being free of ion damage, thermally evaporated SiO has been used in many devices such as In-Ga-Zn-O thin-film transistors [24], self-switching diodes [26] and graphene field-effect transistors [27].…”

Section: Introductionmentioning

confidence: 99%

Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors

Zhu

Liang

Zhi‐Jian

et al. 2019

Journal of Physics and Chemistry of Solids

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The surface passivation effects of silicon suboxide (SiOx) prepared by the reactive evaporation of silicon monoxide in oxygen atmosphere on the performance of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) have been investigated. SiOx films with different oxygen contents (1.10 ≤ x ≤ 1.71) and root-mean-square (RMS) roughnesses (0.55 ≤ RMS ≤ 1.01 nm) were prepared under residual pressures from 1 × 10-6 to 6 × 10-4 Torr. Hall measurements revealed obvious increases in the product of sheet carrier concentration and electron mobility after the passivation. Accordingly, increases in drain current and transconductance were observed for all the SiOx passivated HEMTs. Both the gate and drain leakage currents first decreased and then increased with the increase of oxygen content. The lowest gate leakage current was observed in the devices with SiO1.23 passivation, and it was almost 20 times lower than that of the unpassivated devices. The same devices also exhibited the lowest current collapse and off-state drain current. The variations in leakage currents as a function of the residual pressure were found to correlate with the surface roughness of the passivation layer. Finally, the breakdown voltage of the SiO1.23 passivated HEMTs increased to 151 V, up from 99 V in unpassivated devices.

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Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator

Cited by 21 publications

References 14 publications

Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness

Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness

Organic and Amorphous-Metal-Oxide Flexible Analogue Electronics

Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors

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