2010
DOI: 10.1016/j.cap.2009.12.014
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Top-gate ferroelectric thin-film-transistors with P(VDF-TrFE) copolymer

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Cited by 31 publications
(18 citation statements)
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“…Inset shows gate leakage-current density and electric field of P(VDFTrFE) film. 4.5 V, respectively, similar to the results in [5], [6].…”
Section: Resultssupporting
confidence: 78%
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“…Inset shows gate leakage-current density and electric field of P(VDFTrFE) film. 4.5 V, respectively, similar to the results in [5], [6].…”
Section: Resultssupporting
confidence: 78%
“…The PC12TV12T TFTs with the P(VDF-TrFE) dielectric exhibited typical p-type transistor properties, a relatively high charge carrier mobility of more than 0.1 cm 2 /Vs, and a high on/off current ratio of about 10 5 . Figure 4(a) shows the variation in the memory window for various gate voltage (V G ) sweep ranges.…”
Section: Resultsmentioning
confidence: 99%
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“…Five crystalline phases with different conformations are designated like TG þ TG À in a and d phases, allTrans TTT planar zig zag for b phase and T 3 G þ T 3 G À in g and 3 phases [6,7]. Strong electric moments in the PVDF monomer unit arises because of strong electro-negativity of fluorine atoms compared to those of hydrogen and carbon atoms [6,8]. Thus each chain possesses a dipole moment perpendicular to the polymer chain.…”
Section: Introductionmentioning
confidence: 99%