Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Moon, Junghwan; Curtis, D.; Bui, S.; Hu, Ming; Gaskill, D. Kurt; Tedesco, Joseph L.; Asbeck, P.M.; Jernigan, Glenn G.; VanMil, Brenda L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Campbell, Paul M.; Weng, Xiaojun

doi:10.1109/led.2010.2040132

Cited by 143 publications

(103 citation statements)

References 14 publications

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“…Epitaxial growth of graphene on semi-insulating (SI) SiC has the potential to enable next generation ultra high frequency and low power electronic devices [1][2][3][4][5][6]. The main advantage is the possibility to obtain large area graphene directly on SI substrates which is one of the main requirements for high frequency devices.…”

Section: Introductionmentioning

confidence: 99%

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

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Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC (0001) The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions.Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm 2 /Vs) and low carrier density (<0.9x10 13 cm -2 ) in quasifree-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.

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Section: Introductionmentioning

confidence: 99%

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

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“…The standard graphene field-effect transistor (GFET) configuration applied to epitaxial graphene shows promise for transistor applications, but, as far as precision metrology is concerned, suffers from unacceptable gate dielectric leakage, up to nanoamperes per square micrometre of the gate area, even at modest voltages of a few volts. 13 A possible approach to carrier density control of SiC/G is the intercalation of gases such as hydrogen 14 or oxygen 15 at the graphene/SiC interface, with the further possibility to ionimplant a bottom gate. 16 However, these techniques suffer from instability under ambient or high temperature conditions and more importantly, suppress the SiC/G-substrate interaction limiting their use in quantum metrology applications.…”

mentioning

confidence: 99%

Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

Lartsev

Yager

Bergsten

et al. 2014

Applied Physics Letters

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We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

Funding Agencies|Graphene Flagship [CNECT-ICT-604391]; Swedish Foundation for Strategic Research (SSF); Linnaeus Centre for Quantum Engineering; Knut and Allice Wallenberg Foundation; Chalmers AoA Nano; NMS (UK); EMRP project GraphOhm; EMRP within EURAMET; European Union

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“…Epitaxial graphene is synthesized by thermal desorption of silicon from the top layers of a SiC crystal with the remaining carbon atoms re-bonding to form graphene layers. Recent advances in graphene growth and device fabrication have led to demonstrations of fieldeffect transistors made from Si-face epitaxial graphene with radio-frequency (RF) performance exceeding that of their Si-based counterparts [3,4].…”

mentioning

confidence: 99%

Multicarrier transport in epitaxial multilayer graphene

Lin¹,

Dimitrakopoulos²,

Farmer³

et al. 2010

Applied Physics Letters

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Variable-field Hall measurements were performed on epitaxial graphene grown on Siface and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n-and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Cited by 143 publications

References 14 publications

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

Multicarrier transport in epitaxial multilayer graphene

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