Top Surface Imaging for Extreme Ultraviolet Lithography.

Henderson, Craig C.; Wheeler, David R.; Pollagi, Timothy P.; Cardinale, Gregory Frank; O’Connell, Donna J.; Fisher, Aaron; Rao, Veena; Goldsmith, J. E. M.

doi:10.2494/photopolymer.11.459

Cited by 11 publications

(10 citation statements)

References 1 publication

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“…which diffnse through the material and are desorbed from the resist surhce. The silylating reaction considered in this study is given by A+ C%?+D (1) A second reaction (polymer relaxation), which accounts for the swellingof the resistdue to the mass addition included in the silylating reaction (1), is given by…”

Section: 1mentioning

confidence: 99%

“…[1] discuss severalTLI processes. The imaged pattern in the top thin layer of resist is then pattern transferee into the remaining resist thicknessusing an anisotropic plasma etch step.…”

Section: Introductionmentioning

confidence: 99%

“…reference [1]). Like other TLI methods, TSI is an excellent match to EUVL because it allows thick resist layers to be patterned despite the limited penetration depth of the incident radiation (see e.g.…”

Section: Introductionmentioning

confidence: 99%

“…[4], Itani,et al [5], Glezos et al [6], Whelan,et uZ. [?,Zuniga and Neureuther [8], Ocola and Cerrina [9], and Henderson et UL [1].…”

Section: Introductionmentioning

confidence: 99%

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A Fully Coupled Computational Model of the Silylation Process

Evans¹,

Larson²,

Prantil³

et al. 1999

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Section: 1mentioning

confidence: 99%

“…[1] discuss severalTLI processes. The imaged pattern in the top thin layer of resist is then pattern transferee into the remaining resist thicknessusing an anisotropic plasma etch step.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…[4], Itani,et al [5], Glezos et al [6], Whelan,et uZ. [?,Zuniga and Neureuther [8], Ocola and Cerrina [9], and Henderson et UL [1].…”

Section: Introductionmentioning

confidence: 99%

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A Fully Coupled Computational Model of the Silylation Process

Evans¹,

Larson²,

Prantil³

et al. 1999

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“…The absorption coefficients of the resist material are large at the wavelength of 13.5 nm. Thus, as shown in Figure 1, it is proposed mainly three kinds of resist material processing technologies for (1) the ultra thin single layer resist, (2) the silicon containing hi-layer resist, and (3) the silylation resist for top surface imaging [2][3]. We have been developing these three technologies for EUVL.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Outgassing from Resists at the EUV Wavelength.

Irie

Oizumi

Nishiyama

et al. 2001

J. Photopol. Sci. Technol.

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Technologies 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Pref., 243-0198, JapanOne of the important issues in EUVL is the outgassing problem because the contamination caused by the resist outgassing decreases the reflectivity of the reflective mask and the imaging optics. In this report, we evaluated the resist and resin ougassing at EUV wavelength by the quadrupole mass spectrometer (QMS) and the adhesion to surface of Mo/Si substrate or Si substrate from outgassing by the time-of-flight secondary ion mass spectrometry (TOF-SIMS). The samples were four typical kinds of polymers.As a result of QMS-measurement, it was found that the mainly outgassing species detected are carbon oxide (28 amu) and hydrocarbon.As a result of TOF-SIMS measurement, Si (28) due to the substrate were mainly detected in spite of resist or resin sample. TOF-SIMS data have not interrelation to QMS data for these experiments. So, it was found that outgassing materials detected by QMS are little on the surface of the Mo/Si or Si substrate.

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Recent progress in high resolution lithography

Bratton

Yang

Dai

et al. 2006

Polymers for Advanced Techs

249

199

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The nanotechnology revolution of the past decade owes much to the science of lithography, an umbrella term which encompasses everything from conventional photolithography to “unconventional” soft lithography and the self‐assembly of block polymers. In this review, some of the recent advances in lithography are summarized with special reference to the microelectronics industry. The next generation photolithography, two‐photon lithography, step‐and‐flash imprint lithography and nanofabrication using block copolymers are covered, in an attempt to describe more recent work in this vibrant and active field of research. Copyright © 2006 John Wiley & Sons, Ltd.

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Top Surface Imaging for Extreme Ultraviolet Lithography.

Cited by 11 publications

References 1 publication

A Fully Coupled Computational Model of the Silylation Process

A Fully Coupled Computational Model of the Silylation Process

Evaluation of the Outgassing from Resists at the EUV Wavelength.

Recent progress in high resolution lithography

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