Topographical features of ion bombardment-induced microcones on Ag thin films

Tanemura, Masaki; Okuyama, F.

doi:10.1016/0168-583x(90)90020-u

Cited by 15 publications

(2 citation statements)

References 21 publications

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“…After prolonged bombardment, when the film is thin enough the particle supply through surface diffusion is supposed to no longer compete with the sputter removal of atoms as a result of which the mounds cease to grow and ultimately disappear. For relatively thick metal films, the growth process continues and the mounds are finally transformed by further erosion to sharp conical structures [13]. The high α value is an indicative of higher rate of surface diffusion compared to that of sputtering which is necessary for the growth and/ or stabilization of the surface structures.…”

Section: Resultsmentioning

confidence: 99%

Low energy Ar+ ion beam induced kinetic roughening of thin Pt films on a Si substrate

Karmakar

Ghose

2004

Nuclear Instruments and Methods in Physics Research Section B:

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A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar + ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron microscopy (HRSEM) and Rutherford backscattering spectrometry (RBS). The most interesting observation was the formation of mound-like structures on the metal surface. Morphological data were quantitatively analysed within the framework of the dynamic scaling theory. Analyses of the height-height correlation function for different doses yield roughness exponents α in the range 0.65 -0.87, while the root-mean-square roughness amplitude w evolves with the dose φ as a power law w ∝ φ β , with the growth exponent, β ≈ 0.3. The results are discussed.

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Section: Resultsmentioning

confidence: 99%

Low energy Ar+ ion beam induced kinetic roughening of thin Pt films on a Si substrate

Karmakar

Ghose

2004

Nuclear Instruments and Methods in Physics Research Section B:

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“…In some cases, conically-shaped extrusions are formed on the surface of materials by sputter-etching [1][2][3][4][5][6][7][8][9][10]. The reasons for this phenomenon have been attributed to the surface irregularity and the variation of sputtering rate with angle of ion incidence, the selective etching of a specific crystal plane, the masking effect of impurities, precipitates and inclusions in the metals, etc.…”

Section: Introductionmentioning

confidence: 95%

Deformation and delamination behavior of sputter-deposited film on the conical protrusions formed by sputter-etching of stainless steel wire

Nakasa

Yamamoto²,

Kawata

et al. 2009

Surface and Coatings Technology

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Depth profile analysis of aluminium metallization in microelectronics: Optimization of depth resolution

Pamler

Wangemann

1992

Surface & Interface Analysis

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Depth protiling of aluminium metallization in microelectronics devices by Auger or S I M S analysis is impeded by the severe sputter-induced roughening which causes a serious loss in depth resolution. This paper discusses strategies to avoid this deteriorating eflect : optimization of the bombardment angle, sample rotation during sputtering and the use of heavy or reactive ions. The best depth resolutions were achieved by sputtering with normal incidence 15 keV 02+ ions. In this case, an interface width of 12 nm was measured for a film of 1 p m thickness. This is an improvement by more than a factor of 10 compared to the extremely poor depth resolution of 160 nm resulting from routine analysis parameters (Ar+ ions incident at 55"). ~~

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Topographical features of ion bombardment-induced microcones on Ag thin films

Cited by 15 publications

References 21 publications

Low energy Ar+ ion beam induced kinetic roughening of thin Pt films on a Si substrate

Low energy Ar+ ion beam induced kinetic roughening of thin Pt films on a Si substrate

Deformation and delamination behavior of sputter-deposited film on the conical protrusions formed by sputter-etching of stainless steel wire

Depth profile analysis of aluminium metallization in microelectronics: Optimization of depth resolution

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