Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model

Takagi, Shigeyuki; Iyanagi, Katsumi; Onoue, Seiji; Shinmura, Tadashi; Fujino, Makoto

doi:10.1143/jjap.41.3947

Cited by 14 publications

(10 citation statements)

References 2 publications

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“…As can be seen in Fig. 2,11 Higher RIE power also decreases the deviation of the distribution of ion incident angles, 14 leading to less ion bombardment of the sidewalls and thus improved anisotropy. Another key process parameter is the RIE power.…”

Section: Resultsmentioning

confidence: 84%

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl₄/Ar

Zhao¹,

Fay²,

Wibowo³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inBack reflectors based on buried Al2O3 for enhancement of photon recycling in monolithic, on-substrate III-V solar cellsIn this work, inductively coupled plasma reactive ion etching processes with SiCl 4 /Ar gas chemistries were optimized to fabricate wafer-scale, high-density, small-area via-holes for InGaP/ GaAs/InGaAs inverted metamorphic triple-junction solar cells. Anisotropic and smooth etching with good uniformity of both the etch profiles and etch depths across a full 4-in. wafer were obtained. By combining optical emission spectroscopy with an analytical size-effect model, calibrated end-point detection for small features is demonstrated.

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Section: Resultsmentioning

confidence: 84%

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl₄/Ar

Zhao¹,

Fay²,

Wibowo³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…5,6 The fluxes of ions and radicals are calculated from the products of the densities and the velocities at which they collide on the wafer. 5 and 6.…”

Section: A Rie Simulation Modelmentioning

confidence: 99%

Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor deposition

Takagi

Onoue

Iyanagi

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInfinitely high etch selectivity during CH 2 F 2 / H 2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a -C J. Vac. Sci. Technol. A 28, 755 (2010); 10.1116/1.3430551 TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications With the shrinking design rule of semiconductor devices, the aspect ratios of contact holes that connect transistor electrodes to wirings have exceeded 10 at a design rule less than 0.15 m. The contact is formed through sequential processes of reactive ion etching ͑RIE͒, TiN sputtering, and tungsten chemical vapor deposition ͑W-CVD͒. In such a formation process, a contact hole with a large bottom diameter is required to reduce contact resistance. We developed a contact simulation method for optimizing contact formation. This contact simulation involves sequential simulations of RIE, TiN sputtering, and W-CVD processes, which adopt a particle model based on the Monte Carlo method. These topography simulations were calibrated using experimental results, and each simulation was combined in order to calculate these sequential simulations. We calculated the dependences of etching and W-CVD filling profiles on contact hole depth. The simulation profiles of etching and W-CVD filling were in agreement with the experimental results. The sequential simulations showed that W disconnection occurs at over 2.5 m contact depth with a aspect ratio of 19.2 and the contact resistance increases markedly.

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“…It has been found that the micro-or nanoscale may affect the macroscale. [20,21] Concerning the multiscale modeling of plasma etching processes, there are studies [22][23][24][25][26][27][28][29][30][31][32][33][34] linking the reactor with the predefined feature scale. Even if there are separate studies and models for the reactor scale [35][36][37][38][39][40] and for the roughening of substrates with no predefined features, [41][42][43][44] there is no study or framework for the linking or coupling of the reactor scale with the micro-or nanoscale roughness of the etched substrate.…”

Section: Introductionmentioning

confidence: 99%

Multiscale Modeling of Low Pressure Plasma Etching Processes: Linking the Operating Parameters of the Plasma Reactor with Surface Roughness Evolution

Mouchtouris

Kokkoris

2016

Plasma Processes & Polymers

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Α multiscale modeling framework, linking the operating parameters of a low pressure plasma reactor with the surface roughness being formed on the etched substrate, is developed. It consists of a) a reactor scale model, which calculates densities, energies, and fields in the reactor, b) a Monte Carlo (MC) particle tracing model, which calculates the ion energy and angular distributions on the substrate, and c) a MC surface model, which calculates the evolution of the surface morphology during etching. The case study is etching of polymeric substrates with Ar plasma in the GEC reactor. Based on a generic surface model, the effects of the operating conditions (pressure, power) on the roughness are investigated. The potential for non‐uniform and anisotropic roughness along the wafer radial direction is demonstrated.

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Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model

Cited by 14 publications

References 2 publications

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl₄/Ar

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl₄/Ar

Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor deposition

Multiscale Modeling of Low Pressure Plasma Etching Processes: Linking the Operating Parameters of the Plasma Reactor with Surface Roughness Evolution

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Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction Model

Cited by 14 publications

References 2 publications

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl4/Ar

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl4/Ar

Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor deposition

Multiscale Modeling of Low Pressure Plasma Etching Processes: Linking the Operating Parameters of the Plasma Reactor with Surface Roughness Evolution

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Product

Resources

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Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl₄/Ar

Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl₄/Ar