2005
DOI: 10.1103/physrevb.72.041305
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Topological defects in the edge-state structure in a bilayer electron system

Abstract: We experimentally demonstrate, for the first time, formation of point-like topological defects in the edge state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunnelling rate between layers. Unexpected flattening of the I − V curves in perpendicular magnetic field at a specific filling factor combination and the recovery of the conventional nonlinear I − V chara… Show more

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Cited by 11 publications
(21 citation statements)
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“…Such a picture can be destroyed by an in-plane magnetic field component which washes out the above crossing; the I − V curves become then strongly non-linear so signaling the merging of a tunneling process. All the above features in the I − V characteristics appear to be the fingerprints of the presence of a topological defect induced by the different pseudospin configurations in bilayer quantum Hall systems [2].…”
Section: Introductionmentioning
confidence: 92%
See 1 more Smart Citation
“…Such a picture can be destroyed by an in-plane magnetic field component which washes out the above crossing; the I − V curves become then strongly non-linear so signaling the merging of a tunneling process. All the above features in the I − V characteristics appear to be the fingerprints of the presence of a topological defect induced by the different pseudospin configurations in bilayer quantum Hall systems [2].…”
Section: Introductionmentioning
confidence: 92%
“…More interesting features take place in the transport properties of bilayer systems when also pseudospin (related to the layer index) is involved [6] [9]. Recently the presence of edge state crossings and thus of topological defects has been experimentally evidenced in such systems in a quasi-Corbino geometry [10] at filling ν = 3 [2] by means of a selective population technique. In particular the application of a suitable gate voltage V g and of a magnetic field drives the bilayer in different pseudospin states in the gated and ungated regions, so producing a crossing of the edge states which has been detected in the transport properties.…”
Section: Introductionmentioning
confidence: 99%
“…The existence of a gate in this geometry, in particular, allows changing the symmetry of the quantum well, and hence the energy spectrum under the gate [21,22]. Since the structure of edge states corresponds to the structure of the bulk spectrum [27], the quasi-Corbino geometry allows to realize topological defects in the structure of edge states [30]: (i) If the well is asymmetric in the interaction area of the edge states, then edge-state electrons are fully described by the spin and isospin (layer number) orientations [21]. Electrons injected from beneath the gate can also come either from an isospin-polarized state or from a mixed one.…”
Section: Edge States In the Double Quantum Wellsmentioning
confidence: 98%
“…It is interesting to notice that the presence of a topological defect has been experimentally evidenced very recently for a two layers quantum Hall system, by measuring the conduction properties between two edge states of the system [21].…”
Section: Brief Summary With Commentsmentioning
confidence: 99%