2021
DOI: 10.1016/j.scib.2020.10.004
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Topological flat bands in twisted trilayer graphene

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Cited by 63 publications
(43 citation statements)
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“…4 ∘14-16 . The absence of robust correlated insulating states is likely a consequence of the larger bandwidth compared with the D > 0 bands [17][18][19] . Supplementary Note 4 and Supplementary Table 1 provide a detailed summary of the correlated states observed in our three devices, as well as those previously reported in refs.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…4 ∘14-16 . The absence of robust correlated insulating states is likely a consequence of the larger bandwidth compared with the D > 0 bands [17][18][19] . Supplementary Note 4 and Supplementary Table 1 provide a detailed summary of the correlated states observed in our three devices, as well as those previously reported in refs.…”
Section: Resultsmentioning
confidence: 99%
“…The bandwidth, W, and valley Chern number, C v , additionally depend on the orientation of D (Supplementary Fig. 1) [17][18][19] , which can polarize charge carriers more strongly towards either the monolayer or Bernal-stacked bilayer graphene sheet 14 . The high tunability of the bands with the combination of twist angle, doping, D, and magnetic field makes tMBG an attractive platform for investigating the nature of closely competing correlated and topological ground states.…”
mentioning
confidence: 99%
“…a band gap tunable with an out-of-plane displacement field 19 . The symmetry is further reduced in tTLG, by stacking mono-and bi-layer graphene together with a small relative twist angle 20,21 , resulting into ABA-, ABB-and ABC-stacked domains. In this report, we observed electron-hole asymmetry, tunable van Hove singularities as well as correlated insulating states at commensurate fillings on the electron side under finite displacement field in tTLG.…”
mentioning
confidence: 99%
“…s1) which demonstrates that the structure of the states we observe is not an artefact. Therefore, the asymmetry with respect to D could be related to the lack of symmetry in tTLG 21 . To be consistent, we define positive D when electric fields point from monolayer to bilayer graphene (see Fig.…”
mentioning
confidence: 99%
“…[34] The flat band voltage (E fb ) of these photo-catalyst samples can be calculated by extrapolating the tangent line of Mott-Schottky curve to the intersection point of X-axis. [58] In the Figure 5, the E fb values of TiO 2 , g-C 3 N 4 and NiO are À 0.19 eV, À 1.46 eV and 0.08 eV (vs. SCE), respectively. The semiconductor's conduction band potential (E CB ) is equal to the E fb of the n-type semiconductor and the semiconductor's valence band potential (E VB ) is equal to the E fb of the p-type semiconductor.…”
Section: Resultsmentioning
confidence: 92%