Topological insulator in the presence of spatially correlated disorder

Girschik, Adrian; Libisch, Florian; Rotter, Stefan

doi:10.1103/physrevb.88.014201

Cited by 42 publications

(36 citation statements)

References 57 publications

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“…Moreover, it was found that the bulk states can be effectively localized by the long-range disorder, but the edge states are much more robust [199]. Furthermore, in contrast to the Anderson disorder without spatial correlation, the finite correlation length disorder was found to be detrimental to (or even totally suppress) the formation of the topological Anderson insulator [204]. The presence of several types of disorder, Rashba spin-orbit coupling, the finite-size effect [205] as well as correlation make it challenging to observe topological Anderson insulator.…”

Section: H Topological Anderson Insulatormentioning

confidence: 99%

Topological phases in two-dimensional materials: a review

Ren¹,

2016

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Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this review, we mainly focus on the recent progress in the engineering of topologically nontrivial phases (such as Z2 topological insulators, quantum anomalous Hall effects, quantum valley Hall effects etc.) in two-dimensional material systems, including quantum wells, atomic crystal layers of elements from group III to group VII, and the transition metal compounds.

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Section: H Topological Anderson Insulatormentioning

confidence: 99%

Topological phases in two-dimensional materials: a review

Ren¹,

2016

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“…On the other hand, it also been realized that disorder itself can cause an ordinary insulator to undergo a phase transition to a topological insulator (topological Anderson insulator) [21][22][23][24]. In turn, such a transition may be strongly modified when disorder exhibits spatial correlations [25].…”

Section: Introductionmentioning

confidence: 99%

Effects of disorder on electron tunneling through helical edge states

Sternativo

Dolcini

2014

Phys. Rev. B

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A tunnel junction between helical edge states, realized via a constriction in a Quantum Spin Hall system, can be exploited to steer both charge and spin current into various terminals. We investigate the effects of disorder on the transmission coefficient $T_p$ of the junction, by modelling disorder with a randomly varying (complex) tunneling amplitude $\Gamma_p=|\Gamma_p| \exp[i \phi_p]$. We show that, while for a clean junction $T_p$ is only determined by the absolute value $|\Gamma_p|$ and is independent of the phase $\phi_p$, the situation can be quite different in the presence of disorder: phase fluctuations may dramatically affect the energy dependence of $T_p$ of any single sample. Furthermore, analysing three different models for phase disorder (including correlated ones), we show that not only the amount but also the way the phase $\phi_p$ fluctuates determines the localisation length $\xi_{loc}$ and the sample-averaged transmission. Finally, we discuss the physical conditions in which these three models suitably apply to realistic cases.Comment: 14 pages, 7 figure

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“…[27][28][29][30][31][32] It is indicated that TAI is dependent on the type of disorder, for example, TAI phase is absent for the magnetic disorder and spatially correlated disorder. 33,34 On the other hand, gapped and gapless topological phases and transport characteristics in layered structures and thin films have been studied recently in the presence and absence of disorder. [35][36][37] It is interesting to note that Kobayashi et al revealed the TAI phase in topological insulator nanofilms by numerical calculations.…”

Section: Introductionmentioning

confidence: 99%

Topological Anderson insulator phase in a Dirac-semimetal thin film

Chen

Zhou

2017

Phys. Rev. B

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The recently discovered topological Dirac semimetal represents a new exotic quantum state of matter. Topological Dirac semimetals can be viewed as three dimensional analogues of graphene, in which the Dirac nodes are protected by crystalline symmetry. It has been found that quantum confinement effect can gap out Dirac nodes and convert Dirac semimetal to a band insulator. The band insulator is either normal insulator or quantum spin Hall insulator depending on the thin film thickness. We present the study of disorder effects in thin film of Dirac semimetals. It is found that moderate Anderson disorder strength can drive a topological phase transition from normal band insulator to topological Anderson insulator in Dirac semimetal thin film. The numerical calculation based on the model parameters of Dirac semimetal Na3Bi shows that in the topological Anderson insulator phase a quantized conductance plateau occurs in the bulk gap of band insulator, and the distributions of local currents further confirm that the quantized conductance plateau arises from the helical edge states induced by disorder. Finally, an effective medium theory based on Born approximation fits the numerical data.

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Topological insulator in the presence of spatially correlated disorder

Cited by 42 publications

References 57 publications

Topological phases in two-dimensional materials: a review

Topological phases in two-dimensional materials: a review

Effects of disorder on electron tunneling through helical edge states

Topological Anderson insulator phase in a Dirac-semimetal thin film

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