Topological Insulator Thin Films of Bi<sub>2</sub>Te<sub>3</sub> with Controlled Electronic Structure

Guang, Wang; Zhu, Xie-Gang; Sun, Yiyang; Li, Yaoyi; Zhang, Tong; Wen, Jing; Chen, Xi; He, Ke; Wang, Lili; Ma, Xu-Cun; Jia, Jin‐Feng; Zhang, Shou-Cheng; Xue, Quan

doi:10.1002/adma.201100678

Cited by 206 publications

(139 citation statements)

References 30 publications

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“…Beyond graphene itself, inorganic graphene analogues (IGAs) with high percentage of surface atoms have recently sparked worldwide interests owing to their novel properties and great potential for applications in transistors 2 , energy storage 3,4 , thermal conductors 5 and topological insulators 6 . Although the IGAs often bring on a wealth of innovative applications, their species are still only limited to layered compounds.…”

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confidence: 99%

Fabrication of flexible and freestanding zinc chalcogenide single layers

et al. 2012

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Inorganic graphene analogues (IGAs) are a conceptually new class of materials with attractive applications in next-generation flexible and transparent nanodevices. However, their species are only limited to layered compounds, and the difficulty in extension to nonlayered compounds hampers their widespread applicability. Here we report the fabrication of large-area freestanding single layers of non-layered Znse with four-atomic thickness, using a strategy involving a lamellar hybrid intermediate. Their surface distortion, revealed by means of synchrotron radiation X-ray absorption fine structure spectroscopy, is shown to give rise to a unique electronic structure and an excellent structural stability, thus determining an enhanced solar water splitting efficiency and photostability. The Znse single layers exhibit a photocurrent density of 2.14 mA cm − 2 at 0.72 V versus Ag/AgCl under 300 W Xe lamp irradiation, 195 times higher than that of bulk counterpart. This work opens the door for extending atomically thick IGAs to non-layered compounds and holds promise for a wealth of innovative applications.

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Fabrication of flexible and freestanding zinc chalcogenide single layers

et al. 2012

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“…Dirac fermions in 2D are described by the Hamiltonian H D = A σ · (k ×ẑ) + M σ z , with σ = (σ x , σ y , σ z ) the usual Pauli matrices, k = (k x , k y ) the 2D wave vector, A stems from the Fermi velocity and M a generic mass term. In the limit M → 0 the quasi-particle dispersion is linear, a feature that has aroused intense interest experimentally [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] and theoretically [22][23][24][25][26][27][28][29][30][31][32][33][34]. These studies have illuminated the considerable potential of Dirac fermions for spintronics, thermoelectricity, magnetoelectronics and topological quantum computing [35].…”

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confidence: 99%

Anomalous Hall Coulomb drag of massive Dirac fermions

Liu¹,

Liu²,

Culcer³

2017

Phys. Rev. B

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Dirac fermions are actively investigated, and the discovery of the quantized anomalous Hall effect of massive Dirac fermions has spurred the promise of low-energy electronics. Some materials hosting Dirac fermions are natural platforms for interlayer coherence effects such as Coulomb drag and exciton condensation. Here we determine the role played by the anomalous Hall effect in Coulomb drag in massive Dirac fermion systems. We focus on topological insulator films with out-of plane magnetizations in both the active and passive layers. The transverse response of the active layer is dominated by a topological term arising from the Berry curvature. We show that the topological mechanism does not contribute to Coulomb drag, yet the longitudinal drag force in the passive layer gives rise to a transverse drag current. This anomalous Hall drag current is independent of the activelayer magnetization, a fact that can be verified experimentally. It depends non-monotonically on the passive-layer magnetization, exhibiting a peak that becomes more pronounced at low densities. These findings should stimulate new experiments and quantitative studies of anomalous Hall drag.The past decade has witnessed an energetic exploration of Dirac fermions in materials ranging from graphene [1] to topological insulators [2], transition metal dichalcogenides [3] and Weyl and Dirac semimetals [4][5][6]. Dirac fermions in 2D are described by the Hamiltonian H D = A σ · (k ×ẑ) + M σ z , with σ = (σ x , σ y , σ z ) the usual Pauli matrices, k = (k x , k y ) the 2D wave vector, A stems from the Fermi velocity and M a generic mass term. In the limit M → 0 the quasi-particle dispersion is linear, a feature that has aroused intense interest experimentally [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] and theoretically [22][23][24][25][26][27][28][29][30][31][32][33][34]. These studies have illuminated the considerable potential of Dirac fermions for spintronics, thermoelectricity, magnetoelectronics and topological quantum computing [35].Certain materials hosting Dirac fermions, such as 3D topological insulator (TI) slabs, are inherently two-layer systems naturally exhibiting interlayer coherence effects such as Coulomb drag [36][37][38], in which the charge current in one layer drags a charge current in the adjacent layer through the interlayer electron-electron interactions. Drag geometries are intensively studied experimentally in Dirac fermion systems as part of the search for exciton condensation . The most promising Dirac fermion materials have been magnetic TI slabs, in which a dissipationless quantized anomalous Hall effect has been discovered [69][70][71][72], which has already been harnessed successfully [73], stimulating an intense search for device applications. The time-reversal symmetry breaking required in Hall effects [3,28,[74][75][76][77] gives Dirac fermions a finite mass and results in a non-trivial Berry curvature [3,78,79]. Coulomb drag of massive Dirac fermions is thus directly relevant to ongoing experiments, and...

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“…Using this technique, it has been possible to prepare thin films that are insulating in the bulk. By varying the growth parameters and using substrates with negligible lattice mismatch, bulk insulating thin films of Bi 2 Te 3 have been synthesized [7][8][9]. It would be good, on the other hand, to investigate the growth mode of high quality intrinsic Bi 2 Te 3 films on lattice mismatched substrates and especially on insulating substrates (with high relative dielectric constant), as these offer the prospect of strong, gate-induced modulation of the sample's carrier density [10].…”

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confidence: 99%

In situspectroscopy of intrinsicBi2Te3topological insulator thin films and impact of extrinsic defects

et al. 2015

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In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects Ngabonziza, P.; Heimbuch, R.; de Jong, N.; Klaassen, R.A.; Stehno, M.P.; Snelder, M.; Solmaz, A.; Ramankutty, S.V.; Frantzeskakis, E.; van Heumen, E.; Koster, G.; Golden, M.S.; Zandvliet, H.J.W.; Brinkman, A. Published in:Physical Review B DOI:10.1103/PhysRevB.92.035405 Link to publicationCitation for published version (APA): Ngabonziza, P., Heimbuch, R., de Jong, N., Klaassen, R. A., Stehno, M. P., Snelder, M., ... Brinkman, A. (2015). In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects. Physical Review B, 92(3), [035405]. https://doi.org/10.1103/PhysRevB.92.035405 General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

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Topological Insulator Thin Films of Bi₂Te₃ with Controlled Electronic Structure

Cited by 206 publications

References 30 publications

Fabrication of flexible and freestanding zinc chalcogenide single layers

Fabrication of flexible and freestanding zinc chalcogenide single layers

Anomalous Hall Coulomb drag of massive Dirac fermions

In situspectroscopy of intrinsicBi2Te3topological insulator thin films and impact of extrinsic defects

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Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure

Cited by 206 publications

References 30 publications

Fabrication of flexible and freestanding zinc chalcogenide single layers

Fabrication of flexible and freestanding zinc chalcogenide single layers

Anomalous Hall Coulomb drag of massive Dirac fermions

In situspectroscopy of intrinsicBi2Te3topological insulator thin films and impact of extrinsic defects

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Topological Insulator Thin Films of Bi₂Te₃ with Controlled Electronic Structure