2022
DOI: 10.1126/sciadv.abn3837
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Topological phase change transistors based on tellurium Weyl semiconductor

Abstract: Modern electronics demand transistors with extremely high performance and energy efficiency. Charge-based transistors with conventional semiconductors experience substantial heat dissipation because of carrier scattering. Here, we demonstrate low-loss topological phase change transistors (TPCTs) based on tellurium, a Weyl semiconductor. By modulating the energy separation between the Fermi level and the Weyl point of tellurium through electrostatic gate modulation, the device exhibits topological phase change … Show more

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Cited by 27 publications
(18 citation statements)
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“…The chiral state allows for information to be carried and encoded without heat dissipation; first field-effect chirality devices emerge. 36,37 The present work establishes a natural limit to miniaturization of such devices. The culprit is various localization phenomena, also controlled by the number of MLs.…”
Section: Discussionmentioning
confidence: 85%
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“…The chiral state allows for information to be carried and encoded without heat dissipation; first field-effect chirality devices emerge. 36,37 The present work establishes a natural limit to miniaturization of such devices. The culprit is various localization phenomena, also controlled by the number of MLs.…”
Section: Discussionmentioning
confidence: 85%
“…35 Chiral anomaly devices have been demonstrated experimentally. 36,37 In particular, a topological phase change transistor with a high ON/OFF ratio (10 8 ) at low operation voltage and high ON-state conductance demonstrates better performance than conventional charge-based FETs and emerging spin/valley FETs. 37…”
Section: Introductionmentioning
confidence: 99%
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“…Compared to the tested valley transport in topological semimetals 14,25 , the modulation of E F and valley transport in Weyl semiconductor is more efficient due to the tunable carrier density (Supplementary Table 1). Te is a Weyl semiconductor that can exhibit exotic transport behaviours from the Weyl point and non-trivial Berry curvature 23,26 . The intrinsic defects of Te make its E F near the valence band maximum 23,27 , which results in a small energy separation (Δε of about 20 meV) between the E F and the Weyl point (Supplementary Fig.…”
Section: Valley Transport Of Weyl Semiconductormentioning
confidence: 99%