Topological reorganization of gallium-sulfido clusters

Power, Michael B.; Barron, Andrew R.

doi:10.1021/om00044a016

Cited by 75 publications

(73 citation statements)

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“…[103] The precursor had previously been shown to be air stable, to sublime at 225 C under atmospheric pressure, and to have a cubane-type structure (i.e., a pseudo-cubic Ga 4 S 4 cluster core) in the solid state. [104,105] Persistence of the cubane-like structure of the precursor in the vapor phase has been established by electron scattering. [106] Time-of-flight mass spectrometry of photofragments resulting from photolysis of the vapor phase gave evidence of preferred rupture of the Ga±C bonds, rather than the Ga±S bonds.…”

Section: From Alkyl Metal Chalcogenatesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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Section: From Alkyl Metal Chalcogenatesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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“…[7] Syntheses of mixed-metal chalcogenides such as CuInE 2 (E ϭ S, Se) from single-source precursors [8] have also been Results and Discussion successful and their efficiency as photovoltaic cells is documented. [9] Reaction of (Me 3 Si) 3 CAlMe 2 · THF (1) with H 2 S in toluene at room temperature yielded the dimeric trisylaluminum The few examples of structurally characterized [13][14][15][16] H 2 S seems to be unable under the given reaction conditions anisotropic displacement parameters depicting 50% probability.…”

Section: Introductionmentioning

confidence: 99%

“…cently reported sulfide [Mes*Al(µ-S)] 2 · 2 Me 2 SO (Mes* ϭ 2,4,6-tBu 3 C 6 H 2 ) (AlϪSϪAl 83.5°, SϪAlϪS 95.9°, average) A topological reorganization of the polyhedral core as reported for the formation of [tBuGaS] x (x ϭ 6, 7, 8) by therwith a nonplanar Al 2 S 2 ring. [13] Both aluminum centers show distorted tetrahedral coordination by two bridging molysis of [tBuGa(µ 3 -S)] 4 [14] has not been observed for 4. Interestingly, the mass spectrum of 3 shows, in addition sulfur atoms, one THF molecule and one trisyl group.…”

Section: Introductionmentioning

confidence: 99%

Reactions of Dimethyl[tris(trimethylsilyl)methyl]metalanes of Aluminum and Gallium with H2S and Elemental Chalcogens – Crystal Structures of [RAl(μ-S)]2·2 THF, [RGa(μ3-S)]4, [{RAl(μ3-S)}3MeAl(μ3-S)], [RAlMe(μ-SeMe)]2, and [RGaMe(μ-TeMe)]2 [R = C(SiMe3)3]

Schnitter

Klemp

Roesky

et al. 1998

Eur. J. Inorg. Chem.

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The reaction of the trialkylalane (Me3Si)3CAlMe2 × THF (1) with H2S in toluene at room temperature results in the formation of the dimeric sulfido compound [(Me3Si)3CAl(μ‐S)]2 × 2 THF (3), while the reaction of the homologous gallane (Me3Si)3CGaMe2 (2) with H2S under similar conditions affords the heterocubane [(Me3Si)3CGa(μ3‐S)]4 (4). Heating of compound 3 in vacuo gives a mixture of the symmetrically substituted [(Me3Si)3CAl(μ3‐S)]4 (5) and the unsymmetrically substituted heterocubane [{(Me3Si)3CAl(μ3‐S)}3MeAl(μ3‐S)] (6). Reaction of the trialkylmetalanes 1 and 2 with elemental selenium in refluxing toluene results in the formation of the corresponding selenolates [(Me3Si)3CMMe(μ‐SeMe)]2 (7, M = Al; 8, M = Ga). The compounds exhibit a high thermal stability and can not be converted to the corresponding selenides [(Me3Si)3CM(μ3‐Se)]n (M = Al, Ga) upon heating. In contrast, the trialkylalane 1 does not react with tellurium metal in refluxing toluene at all, while the trialkylgallane 2 affords the tellurolate [(Me3Si)3CGaMe(μ‐TeMe)]2 (9) under similar conditions. Compounds 3–9 have been characterized by 1H‐ and 29Si‐NMR, mass, and IR spectroscopy. Furthermore, the molecular structures of compounds 3· C6H6, 4· 1.5 C6H6, 6, 7· C6H6 and 9 have been determined by X‐ray crystallography.

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“…The relationship between the molecular structure, the metal-to-chalcogenide ratio in the precursor complex, and the structure and composition of the solid-state phase is evidently a complex one, and much remains to be elucidated about the factors controlling the film growth process. For example, while in some cases such as the lanthanide 94 0 VCH Verhgsgeseilschf$t mbH, 0-69469 Weinheim, 1996 chalcogenides the oxidation state of the precursor determines the stoichiometry of the solid-state phase, in many other instances redox processes are involved. Thermodynamic and kinetic factors, the preferred (usually unknown) decomposition pathway, temperature, pressure, and the volatility of either the metal or the chalcogenide element all have a role to play.…”

Section: Resultsmentioning

confidence: 99%

Metal Chalcogenide Materials: Chalcogenolato complexes as “single‐source” precursors

Bochmann

1996

Chemical Vapor Deposition

186

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Modern inorganic materials are required to fulfill a range of demands for quality and performance in an increasing number of applications. Single‐source precursor molecules can satisfy many of these requirements. In this review article ligand design (leading, for example, to the dimer shown in the Figure) to address problems associated with gas phase pre‐reactions, thermal stability, ease of handling, toxicity, and purity for II‐VI deposition are discussed.

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Topological reorganization of gallium-sulfido clusters

Cited by 75 publications

References 1 publication

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Reactions of Dimethyl[tris(trimethylsilyl)methyl]metalanes of Aluminum and Gallium with H2S and Elemental Chalcogens – Crystal Structures of [RAl(μ-S)]2·2 THF, [RGa(μ3-S)]4, [{RAl(μ3-S)}3MeAl(μ3-S)], [RAlMe(μ-SeMe)]2, and [RGaMe(μ-TeMe)]2 [R = C(SiMe3)3]

Metal Chalcogenide Materials: Chalcogenolato complexes as “single‐source” precursors

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