2022
DOI: 10.1038/s41586-022-04851-6
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Topologically protected magnetoelectric switching in a multiferroic

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Cited by 34 publications
(20 citation statements)
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“…The electrical field is a conventional and efficient way to switch the ferroelectric domains, but ferroelectric device performance may be degraded due to the leakage and/or dielectric breakdown, [ 9 ] or the surface damage from ionic migration [ 10 ] during the electrical switching. Some alternative domain switching approaches through magnetic field, [ 11 ] light, [ 12 ] water‐solution [ 13 ] or mechanical force, [ 14 ] etc, have been developed to address such issues.…”
Section: Introductionmentioning
confidence: 99%
“…The electrical field is a conventional and efficient way to switch the ferroelectric domains, but ferroelectric device performance may be degraded due to the leakage and/or dielectric breakdown, [ 9 ] or the surface damage from ionic migration [ 10 ] during the electrical switching. Some alternative domain switching approaches through magnetic field, [ 11 ] light, [ 12 ] water‐solution [ 13 ] or mechanical force, [ 14 ] etc, have been developed to address such issues.…”
Section: Introductionmentioning
confidence: 99%
“…17−19 From this point of view, the construction of ferroic materials should involve some specific components, which would undergo thermodynamic structural phase transitions. DABCO (1,4-diazabicyclo[2.2.2]octane), as a typical spherical molecule, is the preferred building block for constructing ferroic materials, which could easily undergo an orientational disorder and a dynamic rotation in response to temperature. 20,21 To date, many DABCO-based ferroelectrics have been developed with pronounced physical properties, including perovskites, organic−inorganic hybrid complexes, and acid−base ionic crystals.…”
Section: ■ Introductionmentioning
confidence: 99%
“…With the arrival of the big data era, multiferroic materials that have more than one type of ferroic order in the same phase of one material can produce a wealth of new possibilities for data memory . These functional materials possess a wide range of applications in sensors and logical devices, such as magnetic sensors, magnetoelectric memory, and voltage-driven magnetic tunnel junctions. They have attracted particular interest mainly because of the novel functionalities induced from the coupling/coexistence between the ferromagnetic and the ferroelectric orders. , Among them, ferroelectric materials always possess abundant physical properties, including piezoelectricity, pyroelectricity, second harmonic nonlinear optics, and so on.…”
Section: Introductionmentioning
confidence: 99%
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“…
coupling in multiferroics has attracted considerable research interests due to the wide range of applications in high-density information storages and low-energyconsumption spintronic devices. [7][8][9][10][11][12][13][14] Notably, the manipulation of magnetism by electric field has shown the transformative potential in the next-generation logic devices. [15][16][17][18][19][20][21][22][23][24] Nevertheless, the magnetoelectric coupling is extremely weak in traditional type-I multiferroics because of the mutually exclusive origins between ferroelectricity and ferromagnetism.
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mentioning
confidence: 99%