Multiferroic topologies
are an emerging solution for future low-power
magnetic nanoelectronics due to their combined tuneable functionality
and mobility. Here, we show that in addition to being magnetoelectric
multiferroic at room temperature, thin-film Aurivillius phase Bi
6
Ti
x
Fe
y
Mn
z
O
18
is an ideal material
platform for both domain wall and vortex topology-based nanoelectronic
devices. Utilizing atomic-resolution electron microscopy, we reveal
the presence and structure of 180°-type charged head-to-head
and tail-to-tail domain walls passing throughout the thin film. Theoretical
calculations confirm the subunit cell cation site preference and charged
domain wall energetics for Bi
6
Ti
x
Fe
y
Mn
z
O
18
. Finally, we show that polar vortex-type topologies also
form at out-of-phase boundaries of stacking faults when internal strain
and electrostatic energy gradients are altered. This study could pave
the way for controlled polar vortex topology formation via strain
engineering in other multiferroic thin films. Moreover, these results
confirm that the subunit cell topological features play an important
role in controlling the charge and spin state of Aurivillius phase
films and other multiferroic heterostructures.