Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits

Pease, R.L.; Turfler, R. M.; Platteter, D.G.; Emily, D.; Blice, Richard D.

doi:10.1109/tns.1983.4333111

Cited by 51 publications

(8 citation statements)

References 3 publications

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“…Pease et a/. [76] reported that the radiation-induced failure mechanism is predominantly the p-type Si inversion at the bottom of the recessed field oxide which causes buried-layerto-buried-layer channeling, or at the oxide sidewall which causes collector-to-emitter leakage (Fig. 22).…”

Section: Leakage Currentsmentioning

confidence: 99%

Radiation effects on microelectronics in space

1988

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The basic mechanisms of space radiation effects on microelectronics are reviewed in this paper. Topics discussed include the effects of displacement damage and ionizing radiation on devices and circuits, single event phenomena, dose enhancement, radiation effects on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment. A summary is presented of damage mechanisms that can cause temporary or permanent failure of devices and circuits opera ting in space. w , 0 -2 r O 7

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Section: Leakage Currentsmentioning

confidence: 99%

Radiation effects on microelectronics in space

1988

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“…Comparison of the model (symbols) with experimental data (solid lines) [6] is shown for the radiation doses of 0 KRad, 20 KRad, 100 KRad, and 500 KRad. We have used the dependencies Not = 2.9 x 108holes/cm2/rad(Si) and Nit = 5.5 x 107states/cm2/rad(Si) [7].…”

Section: Results a N D Discussionmentioning

confidence: 99%

“…Radiation effects on MOSFETs have been characterized and modeled in [3,4,5] while those on a BJT have been qualitatively described in [6,7,8].…”

Section: Introductionmentioning

confidence: 99%

Radiation and hot electron effects on BiCMOS switching

Phanse

Yuan

Yeh

et al. 1994

Conference Record Southcon

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Abstrad-The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studied. The radiation induced surface recombination current in the base of the bipolar transistor and the radiation and hot electron induced resistive leakage paths in the BiCMOS structure have been modeled as a function of the interface state density and the oxide trapped charge density. An equivalent circuit model of a BiCMOS inverter, including radiation and hot electron effects on the MOSFET and the bipolar transistor and leakage paths in the BiCMOS structure is proposed. The proposed model is compared with experimental data and with MEDICI simulations and the agreement is good.

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“…If shown in figure 78 form at thick field oxide the technology permits multiple resistors in an MOSFET which is used to evaluate total-doseepi tub, the designer may wish to provide other induced leakage [107]. tub contacts at a variety of distances from the latch path.…”

Section: Multidevice Structuresmentioning

confidence: 99%

Radiation Effects Test Chip Guidelines

Alexander¹

1991

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Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits

Cited by 51 publications

References 3 publications

Radiation effects on microelectronics in space

Radiation effects on microelectronics in space

Radiation and hot electron effects on BiCMOS switching

Radiation Effects Test Chip Guidelines

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