Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells

Abstract

The mechanism behind the quantum-well-width dependent Shockley-Read-Hall (SRH) recombination lifetime is investigated in the InGaN/GaN quantum wells (QWs). According to the literature, the strong dependence of SRH lifetime on QW width is proposed to originate from the electron-hole separation in c-plane QWs, just as the radiative recombination. However, in this work, by temperature dependent steady-state time-resolved photoluminescence experiment, it is found that besides the QW width, the SRH lifetime also increases significantly with increasing QW number, which cannot be explained by the electron-hole separation. The two kinds of dependences of SRH lifetime can be attributed to the same source, judging from their similar activation energies, which is the existence of indium atoms compensating the SRH recombination centers generated during the epitaxy and thereby prolonging the SRH lifetime. The density of SRH centers deduced from our analysis decreases with the total thickness of the InGaN layer in a consistent manner for both the QW-width dependent and QW-number dependent sets of samples.

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

“…We used a novel method to determine both the radiative and non-radiation lifetime of excess carriers at room temperature. The related theoretical explanation could be found in References [ 29 , 30 ]. A modulated quasi-CW laser was used as the excitation source in the TRPL experiment.…”

Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes

“…By means of the mesh optimization, the swept meshing technique not only reduces the number of meshes (compared with the default tetrahedral mesh), but also enables numerical solutions to reach convergence more effectively (e.g., with reasonable/reduced computing resource and time). In reference to material growth conditions, Table 1 lists the material properties of various micro-LED layers used for electrical modeling/simulation [17][18][19][20][21][22][23][24]. The material layers were assumed as heavily doped near the electrode to ensure ohmic contacts to electrodes.…”

“…n and p are electron and hole concentrations, Cn and Cp are the auger recombination coefficients, τn and τp are electron and hole lifetimes (in the bulk) for the Shockley-Read-Hall recombination, and vs,n and vs,p are the surface recombination velocities (SRVs) for both electrons and holes, respectively. In general, RAuger is more significant at the high current densities, while RSRH is dominant at the low current densities (thus, under general In reference to material growth conditions, Table 1 lists the material properties of various micro-LED layers used for electrical modeling/simulation [17][18][19][20][21][22][23][24]. The material layers were assumed as heavily doped near the electrode to ensure ohmic contacts to electrodes.…”

“…In reference to material growth conditions, Table 1 lists the material properties of various micro-LED layers used for electrical modeling/simulation [ 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 ]. The material layers were assumed as heavily doped near the electrode to ensure ohmic contacts to electrodes.…”

Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

“…This, however, does not solve the problem of the overestimation of E g at T = 0 K. In addition, it leads to unreasonably high values of B and C compared to their published values. 18,22,23 Note, however, that a large C parameter might be justified in the case of carrier leakage, although this is observed in LEDs only at high carrier injection. 20 A large B parameter, on the other hand, could be justified by supposing a trap-assisted Auger process, but signatures of this have so far been observed only in low-efficiency MBE-grown devices.…”