Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

“…The TID response of the p-FinFET does not affect the OFF-state performances of the device. But irradiation makes the threshold voltage more negative because the radiationinduced trapped charges are positive in nature [15,38]. Whereas, radiation-induced n-FinFET shows degradation in OFF-state and shifts in V th both due to the accumulation and generation of oxide trap charges.…”

“…Moreover, gate workfuction of the device is directly proportional to threshold voltage. The threshold voltage of MGW device is more as compared to the SGW device and high V th devices are mostly preferable for space applications [15,21,[30][31][32][42][43][44][45][46][47].…”

“…The TID mostly affects insulating layers and causes relatively stable long-term changes in device and circuit properties that could lead to parametric degradation or functional failure [2,13,14]. The impact of the TID on the plannar CMOS device is reported by many research groups [13][14][15][16][17][18][19]. The introduction of FinFET to the CMOS family improves the post radiation behavior due to its 3-D structure and ease of fabrication [17,20].…”

“…The threshold voltage, OFF-state current (I OFF ) and subthreshold swing (SS) are the important parameters for the TID analysis of FinFET. The modulated gate workfunction (MGW) is introduced to enhance the OFF-state performance and maintain positive threshold [15,21]. This technique's superiority is due to its perfect vertical electric field control, which improves carrier velocity.…”