Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology

Re, V.; Manghisoni, M.; Ratti, L.; Speziali, V.; Traversi, G.

doi:10.1109/tns.2006.871802

Cited by 43 publications

(26 citation statements)

References 20 publications

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“…The gate material is poly-crystalline Si. The devices tested are n-well FOXFETs with a width of 200 m and length of 1.48 m or 0.92 m. Because the channel is formed at the bottom of the STI, these structures enable us to focus exclusively on the defects in the isolation oxide [17]- [19].…”

Section: Methodsmentioning

confidence: 99%

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Zhou

Fleetwood

Schrimpf

et al. 2008

IEEE Trans. Nucl. Sci.

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Low-frequency (1 ) noise measurements were performed at room temperature as a function of gate bias on Field-Oxide Field Effect Transistors (FOXFETs) that were irradiated with 10-keV X-rays and then annealed at room temperature. The resulting oxide-trap and interface-trap charge densities were estimated by the midgap charge separation technique. Some devices also were exposed to 85% relative humidity at 130 C for three days after irradiation and annealing. Effective border trap densities were estimated from noise measurements in each case. The noise magnitude increases after irradiation and decreases first during annealing and then even more significantly after moisture exposure. The post-humidity-exposure noise for the irradiated devices is well below the pre-irradiation noise for these devices and experimental conditions. The increased noise due to irradiation is attributed to O vacancies and hydrogen bridge (Si-H-Si) defects in the near-interfacial field oxide. The reduction in noise with room-temperature annealing and humidity exposure is due to a combination of thermal and tunnel annealing processes and defect passivation reactions involving water.

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Section: Methodsmentioning

confidence: 99%

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Zhou

Fleetwood

Schrimpf

et al. 2008

IEEE Trans. Nucl. Sci.

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“…Among them, single NMOS transistors with different gate widths ( , 600, 20, 10, 0.18 ) and lengths ( , 0.35, 10 ), and different kinds of pn junction diodes, including diodes with a deep N-well, double junction structure, as in the DNW-MAPS sensor. In the irradiation tests described in this paper, the DUTs were exposed to -rays from a source featuring a dose rate of 12 . The final integrated dose, 1100…”

Section: Duts and Test Proceduresmentioning

confidence: 99%

“…It can be easily shown that (4) Therefore, a decrease in may result in an increase of the output conductance of and, in turn, in a decrease of . Although deep submicron CMOS technologies are widely known to feature a high degree of radiation tolerance [12], narrow channel devices belonging to the same CMOS generation as the technology used for the DNW-MAPS discussed here were found to undergo the so called RINC (radiation-induced narrow channel) effect, originating from charge trapping in the shallow trench isolation oxides and proven to affect both N and P-channel devices [13]. A very similar behavior was actually found in irradiated devices from the same 130 nm process as the DNW-MAPS.…”

Section: A Charge Sensitivitymentioning

confidence: 99%

TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors

Ratti

Andreoli

Gaioni

et al. 2009

IEEE Trans. Nucl. Sci.

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This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in a STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to -rays up to a final dose of 1100 krad(SiO 2 ) and then subjected to a 100 C annealing cycle. Ionizing radiation tolerance was tested by monitoring the device noise properties and its response to charge injection through an external pulse generator throughout the irradiation and annealing campaign. The origins of performance degradation are discussed based on the results from radiation hardness characterization of single transistors belonging to the same CMOS technology and of test diodes reproducing the MAPS collecting electrode structure. Also circuit simulations have been performed to supply further evidence for the proposed degradation mechanisms.

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“…Although deep submicron CMOS technologies are widely known to feature a high degree of radiation tolerance [12], narrow channel devices (W<1 µm) belonging to the same CMOS generation as the technology used for the DNW-MAPS discussed here were found to undergo the so called RINC (radiation-induced narrow channel) effect, originating from charge trapping in the shallow trench isolation oxides and proven to affect both N and P-channel devices [13]. A very similar behavior was actually found in irradiated devices from the same 130 nm process as the DNW-MAPS.…”

Section: A Charge Sensitivitymentioning

confidence: 99%

TID effects in deep N-well CMOS monolithic active pixel sensors

Ratti¹,

Andreoli²,

Gaioni³

et al. 2008

2008 European Conference on Radiation and Its Effects on Components and Systems

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Abstract-This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in a STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to γ-rays up to a final dose of 1100 krad(SiO2) and then subjected to a 100• C annealing cycle. Ionizing radiation tolerance was tested by monitoring the device noise properties and its response to charge injection through an external pulse generator throughout the irradiation and annealing campaign. The origins of performance degradation are discussed based on the results from radiation hardness characterization of single transistors belonging to the same CMOS technology and of test diodes reproducing the MAPS collecting electrode structure. Also circuit simulations have been performed to supply further evidence for the proposed degradation mechanisms.

show abstract

Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology

Cited by 43 publications

References 20 publications

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors

TID effects in deep N-well CMOS monolithic active pixel sensors

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