Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

Abstract

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

“…X-ray radiography has been widely used for a broad range of applications such as nondestructive inspection in industry and disease diagnosis in hospitals. − In X-ray diagnosis systems, many efforts have been made to achieve high-performance digital X-ray detectors with high resolution and stability to generate optimized image quality for accurate diagnosis. − A thin-film transistor (TFT) panel, which is one of the components of a digital X-ray detector, plays an important role in implementing high-quality images from the incoming electric signal produced by photodiodes and scintillators. Thus, developing highly stable TFT devices that can sustain their electrical performance under X-ray irradiation is crucial. ,,, In previous reports, several groups utilized TFTs with various channel materials, such as amorphous silicon (a-Si) TFTs ,− and low-temperature polycrystalline silicon (LTPS) TFTs, − for backplane pixels of digital X-ray detectors. Among them, a-Si TFTs have been widely used for flat-panel X-ray detectors; however, they suffer from low carrier mobility, thereby necessitating a large TFT with a large parasitic data line capacitance, which increases electronic noise and reduces the pixel fill factor. , The carrier mobility of the LTPS TFT is approximately 100 times higher than that of the a-Si TFTs; therefore, their use increases the pixel fill factor.…”

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs*

“…The CMOS-compatible qubits in silicon [1][2][3][4][5][6][7][8] bring increased interest in cryogenic CMOS (cryo-CMOS) electronics, which provides the best choice for realizing the high level of integration to manipulate a large number of qubits reliably. Under this background, the ultra-thin body siliconon-insulator (UTB SOI) technology offers an attractive platform to develop a scalable and hybrid quantum computing system.…”

Polymer-Decorated 2D MoS2 Synaptic Transistors for Biological Bipolar Metaplasticities Emulation*

“…[24−27] Two-dimensional MoS 2 -based devices have high application prospects in many of the most advanced electronic applications due to the fact that the MoS 2 material has interesting electron properties, as well as special atomically scalable structure advantages. [28,29] Figure 1(b) shows the optical top-view micrograph of the MoS 2 FET where the two nickel electrodes are connected by an MoS 2 flake. By using atomic force microscopy (AFM), the thickness of as-fabricated MoS 2 flakes is estimated to be ∼9.7 nm, as shown in Fig.…”

“…Actually, there are other amorphous polymers such as poly-𝛼-methylstyrene, poly-methyl methacrylate, and polystyrene that can be excellent candidates of gate dielectric materials according to the literature. [24−27] Two-dimensional MoS 2 -based devices have high application prospects in many of the most advanced electronic applications due to the fact that the MoS 2 material has interesting electron properties, as well as special atomically scalable structure advantages [28,29]. Figure 1(b) shows the optical top-view micrograph of the MoS 2 FET where the two nickel electrodes are…”