2016
DOI: 10.1002/crat.201500344
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Total pressure‐controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Abstract: A total pressure-controlled physical vapor transport growth method that stabilizes SiC polytype is proposed. The supersaturation of carbon during SiC growth changed as a function of the growth time due to changes in the temperature difference between the surfaces of the source and the grown crystal. Supersaturation also varied as a function of the pressure inside the furnace. Therefore, modification of the pressure as a function of growth time allowed for constant supersaturation during growth. The supersatura… Show more

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(1 citation statement)
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“…Based on thermodynamic data of the various SiC polytypes available in literature, Kakimoto et al [135], Shiramomo et al [136,137] and Araki et al [138] have presented an analysis of polytype stability during PVT growth of SiC using 2D nucleation theory. They investigated the influence of the gas phase composition in terms of C/Si ratio, doping and total pressure with applied inert gas as well as seed polarity to predict theoretically the most stable SiC polytype.…”
Section: Polytype Stability Criteria During Sic Growthmentioning
confidence: 99%
“…Based on thermodynamic data of the various SiC polytypes available in literature, Kakimoto et al [135], Shiramomo et al [136,137] and Araki et al [138] have presented an analysis of polytype stability during PVT growth of SiC using 2D nucleation theory. They investigated the influence of the gas phase composition in terms of C/Si ratio, doping and total pressure with applied inert gas as well as seed polarity to predict theoretically the most stable SiC polytype.…”
Section: Polytype Stability Criteria During Sic Growthmentioning
confidence: 99%