Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes

Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.

doi:10.1016/j.sab.2008.10.003

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…Different approaches are used to satisfy the need of the semiconductor industry for low detection limits and larger wafers. Direct analysis with and without chemical surface treatment as well as sputtering methods were developed [88][89][90][91]. Both uncoated and coated wafers can be characterized.…”

Section: Surface and Thin-layer Analysismentioning

confidence: 99%

“…In some cases the thickness of the removed layer is determined using interferometry or differential weighing [88][89][90]102]. Sputtering is more elaborate as the sputtered material has to be deposited on a sample support in a proper fashion to be analyzed [91,103]. A customized chamber is often necessary to achieve this.…”

Section: Surface and Thin-layer Analysismentioning

confidence: 99%

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Total reflection X-ray fluorescence

Schmeling

2019

Physical Sciences Reviews

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Abstract Total reflection X-ray fluorescence (TXRF) spectrometry is a non-destructive and surface sensitive multi-element analytical method based on energy dispersive X-ray fluorescence spectrometry with detection limits in the lower picogram range. It utilizes the total reflection of the primary X-ray beam at or below the critical angle of incidence. At this angle, the fluorescence intensity is substantially enhanced for samples present as small granular residue or as thin homogenous layer deposited at the surface of a thick substrate. Generally, two types of application exist: micro- and trace-analysis as well as surface and thin-layer analysis. For micro- and trace-analysis, a small amount of the solid or liquid sample is deposited on an optically flat substrate, typically quartz or polycarbonate. The dried residue is analyzed at a fixed angle setting slightly below the critical angle. Quantification is carried out by means of internal standardization. For surface and thin-layer analysis, the surface of an optically flat substrate is scanned. Variations of the incident angle of the primary X-ray beam provide information about the type and sometimes also the amount of material present at or slightly below the surface of the substrate. Major fields of application are environmental samples, biological tissues, objects of cultural heritage, semiconductors and thin-layered materials and films.

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Section: Surface and Thin-layer Analysismentioning

confidence: 99%

Section: Surface and Thin-layer Analysismentioning

confidence: 99%

Total reflection X-ray fluorescence

Schmeling

2019

Physical Sciences Reviews

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“…Sekowski et al applied TXRF for the investigation of sputtering processes (201). They studied an Ar ion beam sputtering process for a Ge target with angles of incidence of 75°and 80°and with an ion energy of 20 keV.…”

Section: Applicationsmentioning

confidence: 99%

X-ray Spectrometry

et al. 2010

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“…They also have to be fast and multi-element capable to accommodate the large number of samples. Bench-top total reflection X-ray fluorescence spectrometry (TXRF) offers all these features as it is a non-destructive, surface sensitive analysis method with detection limits in the lower 10 11 to 10 9 atoms cm −2 range (Klockenkämper, 1997; Wobrauschek, 1998, 2007; Streli et al , 1999; Shaffner, 2000; Pahlke et al , 2001; Hellin et al , 2006; Schmeling, 2005; Sekowski et al , 2008; West et al , 2010; Schmeling et al , 2011).…”

Section: Introductionmentioning

confidence: 99%

Steps toward accurate large-area analyses of Genesis solar wind samples: evaluation of surface cleaning methods using total reflection X-ray fluorescence spectrometry

et al. 2012

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Total reflection X-ray fluorescence spectrometry (TXRF) was used to analyze residual surface contamination on Genesis solar wind samples and to evaluate different cleaning methods. To gauge the suitability of a cleaning method, two samples were analyzed following cleaning by lab-based TXRF. The analysis comprised an overview and a crude manual mapping of the samples by orienting them with respect to the incident X-ray beam in such a way that different regions were covered. The results show that cleaning with concentrated hydrochloric acid and a combination of hydrochloric acid and hydrofluoric acid decreased persistent inorganic contaminants substantially on one sample. The application of C0 2 snow for surface cleaning tested on the other sample appears to be effective in removing one persistent Genesis contaminant, namely germanium. Unfortunately, the TXRF analysis results of the second sample were impacted by relatively high background contamination. This was mostly due to the relatively small sample size and that the solar wind collector was already mounted with silver glue for resonance ion mass spectrometry (RJMS) on an aluminium stub. Further studies are planned to eliminate this problem. In an effort to identify the location of very persistent contaminants, selected samples were also subjected to environmental scanning electron microscopy. The results showed excellent agreement with TXRF analysis. © 2012 International Centre for Diffraction Data. [ doi: l 0.1017 /S08857156l2000346]

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Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes

Cited by 4 publications

References 8 publications

Total reflection X-ray fluorescence

Total reflection X-ray fluorescence

X-ray Spectrometry

Steps toward accurate large-area analyses of Genesis solar wind samples: evaluation of surface cleaning methods using total reflection X-ray fluorescence spectrometry

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