Totem-pole Bridgeless Boost PFC Converter Based on GaN FETs

Abstract

The superiority of gallium nitride FET (GaN FET) over silicon MOSFET is examined in this paper. One of the outstanding features of GaN FET is low reverse-recovery charge, which enables continuous conduction mode operation of totem-pole bridgeless boost power factor correction (PFC) circuit. Among many bridgeless topologies, totem-pole bridgeless shows high efficiency and low conducted electromagnetic interference performance, with low cost and simple control scheme. The operation principle, control scheme, and circuit implementation of the proposed topology are provided. The converter is driven in two-module interleaved topology to operate at a power level of 5.5 kW, whereas phase-shedding control is adopted for light load efficiency improvement. Negative bias circuit is used in gate drivers to avoid the shoot-through induced by high speed switching. The superiority of GaN FET is verified by constructing a 5.5 kW prototype of two-module interleaved totem-pole bridgeless boost PFC converter. The experiment results show the highest efficiency of 98.7% at 1.6 kW load and an efficiency of 97.7% at the rated load.

Simulation study of totem pole bridgeless PFC based on repetitive control algorithm

“…Among the known PFC topologies, the totem pole bridgeless PFC topology uses the least electronic devices, so the device loss generated by this topology is relatively small and the efficiency is high. With the emergence of the third generation wide band gap semiconductors GaN and SiC, the conduction loss of the switch tube is smaller and the common mode noise is lower, so it has a good application prospect [3][4][5][6] .…”