Toward a unified advanced CD-SEM specification for sub-0.18-μm technology

Allgair, John A.; Archie, Charles N.; Banke, G. W.; Bogardus, E. Hal; Griffith, J. E.; Marchman, Herschel M.; Postek, Michael T.; Saraf, L; Schlesinger, Jerry E.; Singh, Bhanwar; Sullivan, Neal T.; Trimble, L. E.; Vladár, András; Yanof, Arnold W.

doi:10.1117/12.308724

Cited by 8 publications

(5 citation statements)

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“…Proliferation of new standard methodologies will be rewarded by metrology performance far beyond what can be achieved by the performance based test and calibrations. Our methods may be seen as the ultimate non-performance based system test, matching and monitoring, such as advocated by ISEMATECH AMAG and OMAG [44].…”

Section: Summary New Trends and Discussion Conclusionmentioning

confidence: 99%

Applications of image diagnostics to metrology quality assurance and process control

Allgair

Boksha²,

Bunday³

et al. 2003

SPIE Proceedings

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The purpose of this paper is to define standard methods for effective and efficient image-based dimensional metrology for microlithography applications in the manufacture of integrated circuits. This paper represents a consensual view of the co-authors, not necessarily in total agreement across all subjects, but in complete agreement on the fundamentals of dimensional metrology in this application. Fundamental expectations in the conventional comparison-based metrology of width are reviewed, with its reliance on calibration and standards, and how it is different from metrology of pitch and image placement. We discuss the wealth of a priori information in an image of a feature on a mask or a wafer. We define the estimates of deviations from these expectations and their applications to effective detection and identification of the measurement errors attributable to the measurement procedure or the metrology tool, as well as to the sample and the process o fits manufacture. Although many individuals and organizations already use such efficient methods, industrywide standard methods do not exist today. This group of professionals expects that, by placing de facto standard methodologies into public domain, we can help reduce waste and risks inherent in a "spontaneous" technology build-out, thereby enabling a seamless proliferation of these methods by equipment vendors and users of dimensional metrology. Progress in this key technology, with the new dimensional metrology capabilities enabled, leads to improved performance and yield of IC products, as well as increased automation and manufacturing efficiency, ensuring the long-term health of our industry.

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Section: Summary New Trends and Discussion Conclusionmentioning

confidence: 99%

Applications of image diagnostics to metrology quality assurance and process control

Allgair

Boksha²,

Bunday³

et al. 2003

SPIE Proceedings

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“…Among many techniques to characterize CD, the scanning electron microscopy (CD-SEM) which has high throughput and precision is a preferable selection. However, the operation to determine the actual line edge from the intensity image of CD-SEM is somewhat arbitrary [1,2]. Also charging effect and high energy impact of electrons are another concerns.…”

Section: Introductionmentioning

confidence: 98%

The characterization of line-width in mask using spectrophotometry

et al. 2006

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ABSTACTSpectrophotometry has been applied to the characterization of pattered mask line-width. Variations in the line-width by few nanometers can be distinguished by comparing spectrum profiles of reflectance or transmittance in spectrophotometry. It can be theoretically explained that the variations in the spectrum profiles are caused by CD bias of the patterned film. Experimental results also show that the positions of the spectrums along wavelength axis are related to the CD bias measured under CD-SEM. As a result, both spectra could be used to estimate quickly the line-width of patterned mask without in-depth analysis.

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“…Among many techniques to characterize CD, the scanning electron microscopy (CD-SEM) is a preferable choice because of its high throughput and precision. However, the process to determine the actual line edge from the intensity image of CD-SEM is somewhat arbitrary [1,2]. Also charging effect and high energy impact of electrons are another concerns.…”

Section: Introductionmentioning

confidence: 99%

Rotating compensator spectroscopic ellipsometry for line-width control

et al. 2002

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Rotating compensator spectroscopic ellipsometry(RCSE) was applied to the characterization of linewidth in deep uv photoresist (PR) films. Variation of line-width in few nm was distinguishable by comparing the features in conventional ellipsometry parameter{∆, Ψ} or the degree of polarization spectra obtainable from RCSE. The variations in the former spectra were caused by the density change in patterned PR films. Meanwhile, the variations in latter spectra were caused by the surface profile of the film. Once the spectral positions of the features were related to the results of CD-SEM, both spectra could be used to estimate the line-width of patterned PR without in depth analysis. Further, when uniaxial anisotropy was assumed for the film, the line-width could be roughly deduced in the process of extracting the optical properties of film via an effective medium approximation.

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Toward a unified advanced CD-SEM specification for sub-0.18-μm technology

Cited by 8 publications

References 0 publications

Applications of image diagnostics to metrology quality assurance and process control

Applications of image diagnostics to metrology quality assurance and process control

The characterization of line-width in mask using spectrophotometry

Rotating compensator spectroscopic ellipsometry for line-width control

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