2021
DOI: 10.1007/s12200-021-1242-0
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Toward coherent O-band data center interconnects

Abstract: Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption, which are the driving factors for these data links. In this work, the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and evaluated. The discussion includes the fundamental components of coherent data links, namely the optical components, fiber link and transceivers. As a major component of these links, a monol… Show more

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Cited by 29 publications
(18 citation statements)
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“…Considering that, the segmented O-band 2D GC shows more advantages compared to its C-band equivalent and its application in DP 16 QAM coherent systems would be reasonable. This adds further arguments to the discussion on O-band coherent DCIs [39].…”
Section: B Segmented 2d Grating Couplersmentioning
confidence: 66%
See 1 more Smart Citation
“…Considering that, the segmented O-band 2D GC shows more advantages compared to its C-band equivalent and its application in DP 16 QAM coherent systems would be reasonable. This adds further arguments to the discussion on O-band coherent DCIs [39].…”
Section: B Segmented 2d Grating Couplersmentioning
confidence: 66%
“…Using the methods given in the previous section, we compare here exemplary 2D GCs for C-and O-Band within a 40 nm bandwidth around their central wavelengths both numerically and in coherent system simulations. O-band coherent systems are also discussed as a potential candidate for next generation DCIs [39]. All C-and O-band 2D GCs are specifically designed under the boundary conditions of the photonic BiCMOS platform that we use [40], [41].…”
Section: Evaluation Of 2d Grating Couplers For C-and O-bandmentioning
confidence: 99%
“…In the final numerical analysis, we compare similarly 2D GCs with bulk Si or metal mirror in the O-Band. Coherent solutions using O-band have the potential to compete in the data center domain as well [32]. We choose the same SiO 2 thicknesses as for C-band, which are not necessarily optimal for O-band.…”
Section: C-band and O-band A-si:h 2d Gcs At The Topmetal1 Levelmentioning
confidence: 99%
“…Given the strong refractive index contrast in the O and C telecommunication bands, compact C-band based SOI passive devices have been efficiently implemented with SOI p-i-n junction and bulk Ge or GeSi Franz-Keldysh modulators 7 . Nevertheless, the demand for compact transceivers with lower power consumption and large modulation bandwidth in the O-band 8 , has driven interests in demonstrating efficient integration of modulators based on the quantum-confined Stark effect (QCSE) 9 , 10 on silicon. QCSE type modulators are formed by barrier and well layers realised through material engineering which compose the active region for operation at specific wavelengths.…”
Section: Introductionmentioning
confidence: 99%