n-Type doping for improving the electrical characteristics
and
air stability of n-type organic semiconductors (OSCs) is important
for realizing advanced future electronics. Herein, we report a selection
method for an effective n-type dopant with an optimized structure
and thickness based on anthracene cationic dyes with high miscibility
induced by a molecular structure similar to that of OSCs. Among the
doped OSCs evaluated, rhodamine B (RhoB)-doped OSC exhibits the highest
density, a smallest roughness of 2.69 nm, a phase deviation of 0.85°
according to atomic force microscopy measurements, and the highest
electron mobility (μ), showing its high miscibility. Surface
doping of RhoB affords the lowest contact resistance of 2.01 ×
105 Ω cm compared to bulk and contact doping, resulting
in an effective doping structure. The RhoB-doped OSC retains 81.63%
of the original μ value of 6.13 × 10–2 cm2 V–1 s–1 after
15 days, whereas pristine OSC shows a lower μ of 2.33 ×
10–2 cm2 V–1 s–1 and maintains only 4.41% of the original value after
15 days. Our findings demonstrate that this methodology is effective
for the selection of a high-performance n-type dopant for OSCs toward
the development of high-performance and air-stable n-type organic
electronics.