Toward fast growth of large area high quality graphene using a cold-wall CVD reactor

Abstract

In this work we provide a detailed analysis on graphene synthesis by Chemical Vapor Deposition (CVD) using a cold wall CVD reactor to achieve fast production of large area high quality graphene.

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

“…Furthermore, the graphene grain size drastically decreased at lower growth temperature (La = 22.18 nm at 650 °C) compared to the ones obtained at a higher temperature (La = 47.51 nm at 850 °C), this is shown in Figure 8. In agreement with the aforementioned results, Alnuaimi et al studied the effect of graphene growth temperature using a cold-wall CVD reactor, showing that multilayer nucleation density is reduced at higher process temperature [80]. The investigated growth temperature varied from 1000 to 1060 °C; multilayer graphene regions were grown at 1000 °C while the nucleation density was Figure 7.…”

“…In agreement with the aforementioned results, Alnuaimi et al studied the effect of graphene growth temperature using a cold-wall CVD reactor, showing that multilayer nucleation density is reduced at higher process temperature [80]. The investigated growth temperature varied from 1000 to 1060 °C; multilayer graphene regions were grown at 1000 °C while the nucleation density was In agreement with the aforementioned results, Alnuaimi et al studied the effect of graphene growth temperature using a cold-wall CVD reactor, showing that multilayer nucleation density is reduced at higher process temperature [80]. The investigated growth temperature varied from 1000 to 1060 • C; multilayer graphene regions were grown at 1000 • C while the nucleation density was reduced by more than 50% at 1060 • C where higher defects density was observed at lower growth temperature.…”

Superclean Growth of Graphene Using a Cold‐Wall Chemical Vapor Deposition Approach

“…In contrast, thermal energy provided by the Joule heating of the graphite supporter was concentrated to the Cu substrate in the CW‐CVD system . This different heating mode would significantly reduce the temperature in the gas phase, and therefore suppress the gas‐phase reaction that leads to the formation of amorphous carbon (Figure d,e; see Figures S3 and S4).…”

Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition

“…Further details about the synthesis can be found in ref. 28. The formation of high quality monolayer graphene was examined using Raman analysis.…”