Toward graphene-based quantum interference devices

Munárriz, J.; Domı́nguez-Adame, F.; Малышев, А. В.

doi:10.1088/0957-4484/22/36/365201

Cited by 35 publications

(54 citation statements)

References 36 publications

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“…In this case the band structure has a width-dependent gap and the corresponding dispersion relation in the vicinity of the gap is parabolic. This energy spectrum is typical for conventional semiconductors and we showed that it presents more robust and promising transmission patterns for transport control and applications [27].…”

Section: Model and Formalismmentioning

confidence: 72%

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Enhancing thermoelectric properties of graphene quantum rings

et al. 2015

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We study the thermoelectric properties of rectangular graphene rings connected symmetrically or asymmetrically to the leads. A side-gate voltage applied across the ring allows for the precise control of the electric current flowing through the system. The transmission coefficient of the rings manifest Breit-Wigner line shapes and/or Fano line shapes, depending on the connection configuration, the width of nanoribbons forming the ring and the side-gate voltage. We find that the thermopower and the figure of merit are greatly enhanced when the chemical potential is tuned close to resonances. Such enhancement is even more pronounced in the vicinity of Fano-like antiresonances which can be induced by a side-gate voltage independently of the geometry. This opens a possibility to use the proposed device as a tunable thermoelectric generator.

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Section: Model and Formalismmentioning

confidence: 72%

“…This voltage allows us to control the current in the device, as thoroughly discussed in Refs. [27,28]. Assuming that electron-phonon scattering in our samples is reduced, we consider electrons in the fully coherent regime transferring ballistically through the system.…”

Section: Model and Formalismmentioning

confidence: 99%

Enhancing thermoelectric properties of graphene quantum rings

et al. 2015

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“…Air molecules, substrate impurities, and random boundaries affect the transport properties of monolayer graphene, preventing the realization of nanoelectronic applications (quantum interface device). 16,17 Additionally, it is more difficult to prepare large-scale monolayer graphene than multilayer graphene. As such, we have studied the effects of Ga ion irradiation on multilayer graphene.…”

Section: Introductionmentioning

confidence: 99%

Surface modification of multilayer graphene using Ga ion irradiation

Wang

Shao

et al. 2015

Journal of Applied Physics

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Articles you may be interested inStructural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1) J. Appl. Phys. 117, 085701 (2015); 10.1063/1.4908216Investigation of the effect of low energy ion beam irradiation on mono-layer graphene AIP Advances 3, 072120 (2013) The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene. V C 2015 AIP Publishing LLC.

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“…17 as well as in in Ref. 33, where it was proposed to utilize the electrostatic Aharonov-Bohm effect via side gates-such as already realized experimentally in Ref. 18-for application in a quantum interference transistor with high on/off ratio made of a hexagonal graphene ring structure with perfect edges, where armchair edges were found to be preferable.…”

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confidence: 97%

The Aharonov–Bohm effect in graphene rings

Schelter

Recher

Trauzettel

2012

Solid State Communications

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This is a review of electronic quantum interference in mesoscopic ring structures based on graphene, with a focus on the interplay between the Aharonov-Bohm effect and the peculiar electronic and transport properties of this material. We first present an overview on recent developments of this topic, both from the experimental as well as the theoretical side. We then review our recent work on signatures of two prominent graphene-specific features in the Aharonov-Bohm conductance oscillations, namely Klein tunneling and specular Andreev reflection. We close with an assessment of experimental and theoretical development in the field and highlight open questions as well as potential directions of the developments in future work.

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Toward graphene-based quantum interference devices

Cited by 35 publications

References 36 publications

Enhancing thermoelectric properties of graphene quantum rings

Enhancing thermoelectric properties of graphene quantum rings

Surface modification of multilayer graphene using Ga ion irradiation

The Aharonov–Bohm effect in graphene rings

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