Toward high efficiency tin perovskite solar cells: A perspective

Li, Hansheng; Wei, Qi; Ning, Zhijun

doi:10.1063/5.0014804

Cited by 29 publications

(25 citation statements)

References 66 publications

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“…[ 7–14 ] However, the toxicity issue of Pb element presented in highly efficient PSCs arouses the concern of environmental pollution and increases the manufacturing cost, which significantly limits their large‐scale application. [ 15–17 ] Therefore, development of lead‐free perovskite materials is highly desirable to fabricate the environmental‐friendly solar cells. [ 18 ]…”

Section: Introductionmentioning

confidence: 99%

Additive Engineering toward High‐Performance Tin Perovskite Solar Cells

Cui

Liu

et al. 2021

Solar RRL

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Perovskite solar cells (PSCs) have emerged as one of the third‐generation photovoltaic technologies. However, the toxicity issue of the lead element in perovskite absorbers hinders their large‐scale production. Thus, exploiting lead‐free perovskite materials becomes an important solution to overcome this challenge. Among all the candidates, tin perovskites have advanced rapidly in recent years due to their low toxicity, favorable bandgap, and high carrier mobility. After a few years of development, the highest power conversion efficiency (PCE) of tin PSCs has exceeded 13%, which is mainly attributed to the breakthroughs arising from additive engineering of the Sn perovskite layer. Herein, the role of additive engineering in the research community of tin PSCs is emphasized. First, the crystal structure, electronic characteristics, and the chemical instability of Sn perovskites are introduced. Next, additives used for stabilizing the Sn2+ components, purifying SnI2 sources, and improving the crystal quality of perovskite films are discussed in detail. Finally, challenges and perspectives are laid out to advance the properties of tin halide perovskites for further improving the device efficiency and stability.

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Section: Introductionmentioning

confidence: 99%

Additive Engineering toward High‐Performance Tin Perovskite Solar Cells

Cui

Liu

et al. 2021

Solar RRL

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“…[46,47] While in recent years ion migration has been confirmed for lead-based 2D perovskites, [48,49] those 2D perovskites that are based on tin (Sn) seem to be less prone to ion migration and it remains unclear to which extent the low-dimensionality or differences in chemical composition, bonding strengths and formation energies for vacancies and interstitials are responsible for this effect. [50,51] Ion migration complicates device characterization by triggering variations in electric field within the device that are not accounted for in the graduate channel approximation adopted for FET analysis and mobility determination. These effects can lead to non-ideal current-voltage (I-V) characteristics which yield mobility under-or overestimation, as well as faster material and device degradation.…”

Section: Ionic Defects and Ion Migration: Impact On Perovskite Fet Operationmentioning

confidence: 99%

“…[ 46,47 ] While in recent years ion migration has been confirmed for lead‐based 2D perovskites, [ 48,49 ] those 2D perovskites that are based on tin (Sn) seem to be less prone to ion migration and it remains unclear to which extent the low‐dimensionality or differences in chemical composition, bonding strengths and formation energies for vacancies and interstitials are responsible for this effect. [ 50,51 ]…”

Section: Physics Of Perovskite Fetsmentioning

confidence: 99%

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

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“…[ 15–17 ] However, the efficiency and stability of the tin PSC (TPSC) is still lagging behind their lead analogues, which mainly ascribes to the poor quality of tin perovskite film, [ 18–20 ] easy oxidation of Sn 2+ , [ 21–24 ] and the unfavorable energy level alignment with the charge carrier transport layers. [ 25,26 ] To address these disadvantages, many efforts have been focused on the inclusion of reductive additives, [ 27–29 ] crystallization engineering, [ 30–32 ] and component modification. [ 33–36 ]…”

Section: Introductionmentioning

confidence: 99%

p‐Type Dopants As Dual Function Interfacial Layer for Efficient and Stable Tin Perovskite Solar Cells

et al. 2021

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Interfacial engineering plays a key role for the stability and efficiency of perovskite photovoltaics, especially for the tin perovskite solar cells (TPSCs). Herein, a simple and effective interfacial layer approach to modify the heterointerface between hole transport layer (HTL) and perovskite active layer is reported. By the deposition of a p‐type dopant, tetrafluoro‐tetracyanoquinodimethane (F4TCNQ) onto the commonly used poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS) HTL, a favorable energy level alignment with the mixed‐cation tin perovskite is obtained. Moreover, the F4TCNQ interfacial layer introduces a passivated contact and suppressed trap density at the HTL/perovskite interface through halogen bonding. As a result, the optimized TPSC yields an improved efficiency of 8.11% as compared with 6.41% of the reference device. Meanwhile, the stability of the TPSC is also improved due to the hydrophobicity of the F4TCNQ interfacial layer. This work demonstrates that the incorporation of an interfacial layer at the HTL/perovskite interface is a feasible approach to boost the efficiency and stability of inverted TPSC.

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Toward high efficiency tin perovskite solar cells: A perspective

Cited by 29 publications

References 66 publications

Additive Engineering toward High‐Performance Tin Perovskite Solar Cells

Additive Engineering toward High‐Performance Tin Perovskite Solar Cells

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

p‐Type Dopants As Dual Function Interfacial Layer for Efficient and Stable Tin Perovskite Solar Cells

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