Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires

Jaloustre, L.; Denmat, Simon Le; Auzelle, Thomas; Azadmand, Mani; Geelhaar, Lutz; Dahlem, Franck; Songmuang, R.

doi:10.1021/acsanm.0c02078

Cited by 14 publications

(18 citation statements)

References 52 publications

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“…Thin hexagonal NWs are only observed on the TiN film annealed under N. We conclude that the AlN nuclei grow radially on the {111} TiN facets until they reach the edges of the grains. This view is confirmed by the TEM cross-section in figure 2 Previous measurements have revealed a metal-polarity for the AlN NWs grown on TiN [16,59]. In the case of GaN, the metal polarity does not allow NW self-assembly [60].…”

Section: ¯||[ ¯]supporting

confidence: 71%

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

John,

Gómez Ruiz,

van Deurzen

et al. 2023

Nanotechnology

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We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al2O3. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modeling of the nanowire elongation rate measured at different temperatures shows that the Al adatom diffusion length maximizes at 1150 °C, which appears to be the optimum growth temperature. However, analysis of the nanowire luminescence shows a steep increase in the deep-level signal already above 1050 °C, associated with O incorporation from the Al2O3 substrate. Comparison with AlN nanowires grown on Si, MgO and SiC substrates suggests that heavy doping of Si and O by interdiffusion from the TiN/substrate interface increases the nanowire internal quantum efficiency, presumably due to the formation of a SiNx or AlOx passivation shell. The outdiffusion of Si and O would also cause the formation of the inversion domains observed in the nanowires. It follows that for optoelectronic and piezoelectric applications, optimal AlN nanowire ensembles should be prepared at 1150 °C on TiN/SiC substrates and will require an ex situ surface passivation.

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Section: ¯||[ ¯]supporting

confidence: 71%

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

John,

Gómez Ruiz,

van Deurzen

et al. 2023

Nanotechnology

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“…growth takes place in the [0001] direction (see supporting information). This result is confirmed by piezoresponse force microscopy studies, 23 but it is surprising given that self-assembled GaN NWs grow along the Npolar [0001] direction. 24,25 The key factor that enables the growth of these NWs is the TiN substrate.…”

Section: Main Textmentioning

confidence: 63%

Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films

Azadmand

Auzelle

Lähnemann

et al. 2020

Physica Rapid Research Ltrs

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Herein, the self‐assembled formation of AlN nanowires (NWs) by molecular beam epitaxy on sputtered TiN films on sapphire is demonstrated. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the NWs are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the NW sidewalls. The high crystalline quality of the NWs is evidenced by the observation of near‐band‐edge emission in the cathodoluminescence spectrum. The key factor for the low NW coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices using these NWs as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.

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“…Thus, the d eff 33 values obtained experimentally on nanowires are ranging from 2 pm V −1 -12 pm V −1 , to be compared with the d eff 33 value of bulk ZnO (9.93 pm V −1 ) [39] and of ZnO thin films (in the range of 2.5-8 pm V −1 ) [38,[40][41][42]. However, the results may be affected by measurement conditions, such as the use of low stiffness AFM tips, which can lead to topographical artefacts [36] and larger electrostatic perturbing effects [38,43,44]. Substrate and electrode materials can as well affect the electromechanical response [45].…”

Section: Introductionmentioning

confidence: 99%

Influence of slow or fast surface traps on the amplitude and symmetry of the piezoelectric response of semiconducting-nanowire-based transducers

Garcia¹,

Mouis²,

Cresti³

et al. 2022

J. Phys. D: Appl. Phys.

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ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. These nanowires are usually non-intentionally n-doped during their growth. The essential role of doping, surface traps and surface Fermi level pinning in the actual response of piezoelectric semiconductors has already been demonstrated. In order to go further, this paper investigates the influence of the density and of the dynamics of surface traps on such important parameters as the output generated potential and the effective piezoelectric coefficient. We implemented numerical simulations based on the finite element method combining the mechanical, piezoelectric, and semiconducting characteristic of ZnO nanowires array based nanocomposites (the so-called VING configuration) operated in compression. It was found that a certain amount of surface traps was required to obtain a usable generated output potential from the studied devices in the range of dimensions and doping level reported in most experimental results. Moreover, the surface traps influence was strongly dependent on their dynamics. As a first step towards the analysis of traps dynamics, we compared the two extreme cases of ultra-slow and ultra-fast traps. The symmetry and asymmetry of the piezoelectric response and a comparison to thin film was also discussed. This study demonstrates that the realistic modelling of the piezoelectric response of semiconductor based transducers should account for traps dynamics effects.

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Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires

Cited by 14 publications

References 52 publications

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Self‐Assembly of Well‐Separated AlN Nanowires Directly on Sputtered Metallic TiN Films

Influence of slow or fast surface traps on the amplitude and symmetry of the piezoelectric response of semiconducting-nanowire-based transducers

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